中国物理B ›› 2017, Vol. 26 ›› Issue (1): 18503-018503.doi: 10.1088/1674-1056/26/1/018503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Photoemission cross section: A critical parameter in the impurity photovoltaic effect

Jiren Yuan(袁吉仁), Haibin Huang(黄海宾), Xinhua Deng(邓新华), Zhihao Yue(岳之浩), Yuping He(何玉平), Naigen Zhou(周耐根), Lang Zhou(周浪)   

  1. 1. School of Science, Nanchang University, Nanchang 330031, China;
    2. Institute of Photovoltaics, Nanchang University, Nanchang 330031, China
  • 收稿日期:2016-08-24 修回日期:2016-10-16 出版日期:2017-01-05 发布日期:2017-01-05
  • 通讯作者: Jiren Yuan E-mail:yuanjiren@ncu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61464007, 61306084, 11664025, and 51561022), the Postdoctoral Science Foundation of Jiangxi Province of China (Grant Nos. 2014KY32, 2013RC08, and 2015KY12), the Natural Science Foundation of Jiangxi Province of China (Grant Nos. 20151BAB207055 and 20161BAB201012), and the Postdoctoral Science Foundation of China (Grant No. 2016M592115).

Photoemission cross section: A critical parameter in the impurity photovoltaic effect

Jiren Yuan(袁吉仁)1,2, Haibin Huang(黄海宾)2, Xinhua Deng(邓新华)1, Zhihao Yue(岳之浩)2, Yuping He(何玉平)2, Naigen Zhou(周耐根)2, Lang Zhou(周浪)2   

  1. 1. School of Science, Nanchang University, Nanchang 330031, China;
    2. Institute of Photovoltaics, Nanchang University, Nanchang 330031, China
  • Received:2016-08-24 Revised:2016-10-16 Online:2017-01-05 Published:2017-01-05
  • Contact: Jiren Yuan E-mail:yuanjiren@ncu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61464007, 61306084, 11664025, and 51561022), the Postdoctoral Science Foundation of Jiangxi Province of China (Grant Nos. 2014KY32, 2013RC08, and 2015KY12), the Natural Science Foundation of Jiangxi Province of China (Grant Nos. 20151BAB207055 and 20161BAB201012), and the Postdoctoral Science Foundation of China (Grant No. 2016M592115).

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摘要： A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic (IPV) effect for silicon solar cells doped with indium. The photovoltaic parameters (short-circuit current density, open-circuit voltage, and conversion efficiency) of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is <10-20 cm2, the conversion efficiency η of the IPV cell always has a negative gain (Δη<0) if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small (large) hole photoemission cross section and large (small) electron photoemission cross section, whose energy levels are near the valence (or conduction) band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.

关键词: solar cell, impurity photovoltaic effect, photoemission cross section, conversion efficiency

Abstract: A numerical study has been conducted to explore the role of photoemission cross sections in the impurity photovoltaic (IPV) effect for silicon solar cells doped with indium. The photovoltaic parameters (short-circuit current density, open-circuit voltage, and conversion efficiency) of the IPV solar cell were calculated as functions of variable electron and hole photoemission cross sections. The presented results show that the electron and hole photoemission cross sections play critical roles in the IPV effect. When the electron photoemission cross section is <10-20 cm2, the conversion efficiency η of the IPV cell always has a negative gain (Δη<0) if the IPV impurity is introduced. A large hole photoemission cross section can adversely impact IPV solar cell performance. The combination of a small hole photoemission cross section and a large electron photoemission cross section can achieve higher conversion efficiency for the IPV solar cell since a large electron photoemission cross section can enhance the necessary electron transition from the impurity level to the conduction band and a small hole photoemission cross section can reduce the needless sub-bandgap absorption. It is concluded that those impurities with small (large) hole photoemission cross section and large (small) electron photoemission cross section, whose energy levels are near the valence (or conduction) band edge, may be suitable for use in IPV solar cells. These results may help in judging whether or not an impurity is appropriate for use in IPV solar cells according to its electron and hole photoemission cross sections.

Key words: solar cell, impurity photovoltaic effect, photoemission cross section, conversion efficiency

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
88.30.gg (Design and simulation) 85.60.Gz (Photodetectors (including infrared and CCD detectors))