A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

doi:10.1088/1674-1056/25/6/067205

中国物理B ›› 2016, Vol. 25 ›› Issue (6): 67205-067205.doi: 10.1088/1674-1056/25/6/067205

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

1 Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2016-02-25 修回日期:2016-03-30 出版日期:2016-06-05 发布日期:2016-06-05
通讯作者: Li-Wei Guo, Xiao-Long Chen E-mail:lwguo@iphy.ac.cn;xlchen@iphy.ac.cn
基金资助:
Project supported by the National Key Basic Research Program of China (Grant Nos. 2011CB932700 and 2013CBA01603) and the National Natural Science Foundation of China (Grant Nos. 51472265 and 51272279).

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

Jiao Huang(黄郊)¹, Li-Wei Guo(郭丽伟)¹, Wei Lu(芦伟)¹, Yong-Hui Zhang(张永晖)², Zhe Shi(史哲)³, Yu-Ping Jia(贾玉萍)¹, Zhi-Lin Li(李治林)¹, Jun-Wei Yang(杨军伟)¹, Hong-Xiang Chen(陈洪祥)¹, Zeng-Xia Mei(梅增霞)², Xiao-Long Chen(陈小龙)¹

1 Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
3 Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2016-02-25 Revised:2016-03-30 Online:2016-06-05 Published:2016-06-05
Contact: Li-Wei Guo, Xiao-Long Chen E-mail:lwguo@iphy.ac.cn;xlchen@iphy.ac.cn
Supported by:
Project supported by the National Key Basic Research Program of China (Grant Nos. 2011CB932700 and 2013CBA01603) and the National Natural Science Foundation of China (Grant Nos. 51472265 and 51272279).

摘要/Abstract

摘要：

A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy. Here, we report a graphene/silicon carbide (SiC)-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 mA/W with a response frequency of over a megahertz under 325-nm laser irradiation. The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices. These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC, two terminal electrodes, and asymmetric light irradiation on one of the electrodes. Importantly, the photon energy is larger than the band gap of SiC. This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.

关键词: epitaxial graphene, ultraviolet photodetector, SiC, self-powered

Abstract:

Key words: epitaxial graphene, ultraviolet photodetector, SiC, self-powered

中图分类号: (Elemental semiconductors)

72.80.Cw

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 81.05.ue (Graphene) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

黄郊, 郭丽伟, 芦伟, 张永晖, 史哲, 贾玉萍, 李治林, 杨军伟, 陈洪祥, 梅增霞, 陈小龙. A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide[J]. 中国物理B, 2016, 25(6): 67205-067205.

Jiao Huang(黄郊), Li-Wei Guo(郭丽伟), Wei Lu(芦伟), Yong-Hui Zhang(张永晖), Zhe Shi(史哲), Yu-Ping Jia(贾玉萍), Zhi-Lin Li(李治林), Jun-Wei Yang(杨军伟), Hong-Xiang Chen(陈洪祥), Zeng-Xia Mei(梅增霞), Xiao-Long Chen(陈小龙). A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide[J]. Chin. Phys. B, 2016, 25(6): 67205-067205.

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A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

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