Distribution of electron traps in SiO2/HfO2 nMOSFET

doi:10.1088/1674-1056/25/5/057702

中国物理B ›› 2016, Vol. 25 ›› Issue (5): 57702-057702.doi: 10.1088/1674-1056/25/5/057702

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Distribution of electron traps in SiO₂/HfO₂ nMOSFET

Xiao-Hui Hou(侯晓慧), Xue-Feng Zheng(郑雪峰), Ao-Chen Wang(王奥琛), Ying-Zhe Wang(王颖哲), Hao-Yu Wen(文浩宇), Zhi-Jing Liu(刘志镜), Xiao-Wei Li(李小炜), Yin-He Wu(吴银河)

1. School of Computer Science, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2016-01-12 修回日期:2016-01-31 出版日期:2016-05-05 发布日期:2016-05-05
通讯作者: Xue-Feng Zheng E-mail:xfzheng@mail.xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

Distribution of electron traps in SiO₂/HfO₂ nMOSFET

Xiao-Hui Hou(侯晓慧)¹, Xue-Feng Zheng(郑雪峰)², Ao-Chen Wang(王奥琛)², Ying-Zhe Wang(王颖哲)², Hao-Yu Wen(文浩宇)², Zhi-Jing Liu(刘志镜)¹, Xiao-Wei Li(李小炜)², Yin-He Wu(吴银河)²

1. School of Computer Science, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2016-01-12 Revised:2016-01-31 Online:2016-05-05 Published:2016-05-05
Contact: Xue-Feng Zheng E-mail:xfzheng@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

摘要/Abstract

摘要： In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO₂ layer have been extracted. Two peaks are observed, which are located at ΔE~-1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO₂/HfO₂ interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO₂ layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices.

关键词: energy and spatial distribution, electron trap, HfO₂

Abstract: In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO₂ layer have been extracted. Two peaks are observed, which are located at ΔE~-1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO₂/HfO₂ interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO₂ layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices.

Key words: energy and spatial distribution, electron trap, HfO₂

中图分类号:

77.55.D-

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.61.Ng (Insulators)

侯晓慧, 郑雪峰, 王奥琛, 王颖哲, 文浩宇, 刘志镜, 李小炜, 吴银河. Distribution of electron traps in SiO₂/HfO₂ nMOSFET[J]. 中国物理B, 2016, 25(5): 57702-057702.

Xiao-Hui Hou(侯晓慧), Xue-Feng Zheng(郑雪峰), Ao-Chen Wang(王奥琛), Ying-Zhe Wang(王颖哲), Hao-Yu Wen(文浩宇), Zhi-Jing Liu(刘志镜), Xiao-Wei Li(李小炜), Yin-He Wu(吴银河). Distribution of electron traps in SiO₂/HfO₂ nMOSFET[J]. Chin. Phys. B, 2016, 25(5): 57702-057702.

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Distribution of electron traps in SiO₂/HfO₂ nMOSFET

Distribution of electron traps in SiO₂/HfO₂ nMOSFET

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