中国物理B ›› 2016, Vol. 25 ›› Issue (4): 46101-046101.doi: 10.1088/1674-1056/25/4/046101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

Tian-Tian Li(李天天), Tie Yang(杨铁), Jia Fang(方家), De-Kun Zhang(张德坤), Jian Sun(孙建), Chang-Chun Wei(魏长春), Sheng-Zhi Xu(许盛之), Guang-Cai Wang(王广才), Cai-Chi Liu(刘彩池), Ying Zhao(赵颖), Xiao-Dan Zhang(张晓丹)   

  1. 1 Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, China;
    2 Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China;
    3 School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China;
    4 Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, China;
    5 Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education, Nankai University, Tianjin 300071, China
  • 收稿日期:2015-11-03 修回日期:2015-12-24 出版日期:2016-04-05 发布日期:2016-04-05
  • 通讯作者: Xiao-Dan Zhang E-mail:xdzhang@nankai.edu.cn
  • 基金资助:
    Project supported by the Hi-Tech Research and Development Program of China (Grant No. 2013AA050302), the National Natural Science Foundation of China (Grant No. 61474065), Tianjin Municipal Research Key Program of Application Foundation and Advanced Technology, China (Grant No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province, China (Grant No. BE2014147-3), and the Specialized Research Fund for the Ph. D. Program of Higher Education, China (Grant No. 20120031110039).

Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

Tian-Tian Li(李天天)1,2,4,5, Tie Yang(杨铁)1,3, Jia Fang(方家)1,2,4,5, De-Kun Zhang(张德坤)1,2,4,5, Jian Sun(孙建)1,2,4,5, Chang-Chun Wei(魏长春)1,2,4,5, Sheng-Zhi Xu(许盛之)1,2,4,5, Guang-Cai Wang(王广才)1,2,4,5, Cai-Chi Liu(刘彩池)3, Ying Zhao(赵颖)1, Xiao-Dan Zhang(张晓丹)1,2,4,5   

  1. 1 Institute of Photo-electronic Thin Film Device and Technique, Nankai University, Tianjin 300071, China;
    2 Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China;
    3 School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China;
    4 Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Tianjin 300071, China;
    5 Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education, Nankai University, Tianjin 300071, China
  • Received:2015-11-03 Revised:2015-12-24 Online:2016-04-05 Published:2016-04-05
  • Contact: Xiao-Dan Zhang E-mail:xdzhang@nankai.edu.cn
  • Supported by:
    Project supported by the Hi-Tech Research and Development Program of China (Grant No. 2013AA050302), the National Natural Science Foundation of China (Grant No. 61474065), Tianjin Municipal Research Key Program of Application Foundation and Advanced Technology, China (Grant No. 15JCZDJC31300), the Key Project in the Science & Technology Pillar Program of Jiangsu Province, China (Grant No. BE2014147-3), and the Specialized Research Fund for the Ph. D. Program of Higher Education, China (Grant No. 20120031110039).

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摘要： Phosphorous-doped hydrogenated nanocrystalline silicon oxide (n-nc-SiOx:H) films are prepared via radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). Increasing deposition power during n-nc-SiOx:H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiOx:H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiOx matrix with higher crystalline volume fraction (Ic) and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiOx:H back reflector prepared by the gradient power during deposition. Compared with the sample with SiOx back reflector, with a constant power used in deposition process, the sample with gradient power SiOx back reflector can enhance the total short-circuit current density (Jsc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively.

关键词: gradient deposition power, n-nc-SiOx:H films, back reflector, Tandem solar cells

Abstract: Phosphorous-doped hydrogenated nanocrystalline silicon oxide (n-nc-SiOx:H) films are prepared via radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). Increasing deposition power during n-nc-SiOx:H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiOx:H film. In addition, in 20s interval before increasing the deposition power, high density small grains are formed in amorphous SiOx matrix with higher crystalline volume fraction (Ic) and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiOx:H back reflector prepared by the gradient power during deposition. Compared with the sample with SiOx back reflector, with a constant power used in deposition process, the sample with gradient power SiOx back reflector can enhance the total short-circuit current density (Jsc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively.

Key words: gradient deposition power, n-nc-SiOx:H films, back reflector, Tandem solar cells

中图分类号:  (Techniques for structure determination)

  • 61.05.-a
61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)) 78.20.-e (Optical properties of bulk materials and thin films) 81.05.Gc (Amorphous semiconductors)