Preparation and room temperature NO2-sensing performances of porous silicon/V2O5 nanorods

doi:10.1088/1674-1056/25/4/040702

中国物理B ›› 2016, Vol. 25 ›› Issue (4): 40702-040702.doi: 10.1088/1674-1056/25/4/040702

Preparation and room temperature NO₂-sensing performances of porous silicon/V₂O₅ nanorods

Wen-Jun Yan(闫文君), Ming Hu(胡明), Ji-Ran Liang(梁继然), Deng-Feng Wang(王登峰), Yu-Long Wei(魏玉龙), Yu-Xiang Qin(秦玉香)

School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China

收稿日期:2015-10-21 修回日期:2015-12-06 出版日期:2016-04-05 发布日期:2016-04-05
通讯作者: Yu-Xiang Qin E-mail:qinyuxiang@tju.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61271070, 61274074, and 61574100).

Preparation and room temperature NO₂-sensing performances of porous silicon/V₂O₅ nanorods

Wen-Jun Yan(闫文君), Ming Hu(胡明), Ji-Ran Liang(梁继然), Deng-Feng Wang(王登峰), Yu-Long Wei(魏玉龙), Yu-Xiang Qin(秦玉香)

School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China

Received:2015-10-21 Revised:2015-12-06 Online:2016-04-05 Published:2016-04-05
Contact: Yu-Xiang Qin E-mail:qinyuxiang@tju.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61271070, 61274074, and 61574100).

摘要/Abstract

摘要： In this paper, porous silicon/V₂O₅ nanorod composites are prepared by a heating process of as-sputtered V film on porous silicon (PS) at 600 ℃ for different times (15, 30, and 45 min) in air. The morphologies and crystal structures of the samples are investigated by field emission scanning electron microscope (FESEM), x-ray diffractometer (XRD), x-ray photoelectron spectroscopy (XPS), and Raman spectrum (RS). An improved understanding of the growth process of V₂O₅ nanorods on PS is presented. The gas sensing properties of samples are measured for NO₂ gas of 0.25 ppm～3 ppm at 25 ℃. We investigate the effects of the annealing time on the NO₂-sensing performances of the samples. The sample obtained at 600 ℃ for 30 min exhibits a very strong response and fast response-recovery rate to ppm level NO₂, indicating a p-type semiconducting behavior. The XPS analysis reveals that the heating process for 30 min produces the biggest number of oxygen vacancies in the nanorods, which is highly beneficial to gas sensing. The significant NO₂ sensing performance of the sample obtained at 600 ℃ for 30 min probably is due to the strong amplification effect of the heterojunction between PS and V₂O₅ and a large number of oxygen vacancies in the nanorods.

关键词: V₂O₅ nanorods, porous silicon, heterojunction, NO₂-sensing

Abstract: In this paper, porous silicon/V₂O₅ nanorod composites are prepared by a heating process of as-sputtered V film on porous silicon (PS) at 600 ℃ for different times (15, 30, and 45 min) in air. The morphologies and crystal structures of the samples are investigated by field emission scanning electron microscope (FESEM), x-ray diffractometer (XRD), x-ray photoelectron spectroscopy (XPS), and Raman spectrum (RS). An improved understanding of the growth process of V₂O₅ nanorods on PS is presented. The gas sensing properties of samples are measured for NO₂ gas of 0.25 ppm～3 ppm at 25 ℃. We investigate the effects of the annealing time on the NO₂-sensing performances of the samples. The sample obtained at 600 ℃ for 30 min exhibits a very strong response and fast response-recovery rate to ppm level NO₂, indicating a p-type semiconducting behavior. The XPS analysis reveals that the heating process for 30 min produces the biggest number of oxygen vacancies in the nanorods, which is highly beneficial to gas sensing. The significant NO₂ sensing performance of the sample obtained at 600 ℃ for 30 min probably is due to the strong amplification effect of the heterojunction between PS and V₂O₅ and a large number of oxygen vacancies in the nanorods.

Key words: V₂O₅ nanorods, porous silicon, heterojunction, NO₂-sensing

中图分类号: (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)

07.07.Df

81.07.-b (Nanoscale materials and structures: fabrication and characterization) 68.35.bg (Semiconductors) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)

闫文君, 胡明, 梁继然, 王登峰, 魏玉龙, 秦玉香. Preparation and room temperature NO₂-sensing performances of porous silicon/V₂O₅ nanorods[J]. 中国物理B, 2016, 25(4): 40702-040702.

Wen-Jun Yan(闫文君), Ming Hu(胡明), Ji-Ran Liang(梁继然), Deng-Feng Wang(王登峰), Yu-Long Wei(魏玉龙), Yu-Xiang Qin(秦玉香). Preparation and room temperature NO₂-sensing performances of porous silicon/V₂O₅ nanorods[J]. Chin. Phys. B, 2016, 25(4): 40702-040702.

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Preparation and room temperature NO₂-sensing performances of porous silicon/V₂O₅ nanorods

Preparation and room temperature NO₂-sensing performances of porous silicon/V₂O₅ nanorods

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