中国物理B ›› 2016, Vol. 25 ›› Issue (3): 38501-038501.doi: 10.1088/1674-1056/25/3/038501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强)   

  1. School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2015-10-10 修回日期:2015-11-08 出版日期:2016-03-05 发布日期:2016-03-05
  • 通讯作者: Wan-Rong Zhang E-mail:wrzhang@bjut.edu.cn
  • 基金资助:
    Project supported by the Natural Science Foundation of Beijing, China (Grant Nos. 4142007 and 4122014), the National Natural Science Foundation of China (Grant No. 61574010), and the Higher Educational Science and Technology Program of Shandong Province, China (Grant No. J13LN09).

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

Yan-Xiao Zhao(赵彦晓), Wan-Rong Zhang(张万荣), Xin Huang(黄鑫), Hong-Yun Xie(谢红云), Dong-Yue Jin(金冬月), Qiang Fu(付强)   

  1. School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • Received:2015-10-10 Revised:2015-11-08 Online:2016-03-05 Published:2016-03-05
  • Contact: Wan-Rong Zhang E-mail:wrzhang@bjut.edu.cn
  • Supported by:
    Project supported by the Natural Science Foundation of Beijing, China (Grant Nos. 4142007 and 4122014), the National Natural Science Foundation of China (Grant No. 61574010), and the Higher Educational Science and Technology Program of Shandong Province, China (Grant No. J13LN09).

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摘要： The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor (AI), such as the effective inductance Ls, quality factor Q, and self-resonant frequency ω 0 is analyzed based on 0.35-μm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density JC, the HBT lateral structure parameters have significant effect on Ls but little influence on Q and ω 0, and the larger Ls can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller JC is beneficial for AI to obtain larger Ls, but with a cost of smaller Q and ω 0. In addition, under the fixed collector current IC, the larger the size of HBT is, the larger Ls becomes, but the smaller Q and ω 0 become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.

关键词: SiGe HBT, lateral structure parameters, active inductor

Abstract: The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor (AI), such as the effective inductance Ls, quality factor Q, and self-resonant frequency ω 0 is analyzed based on 0.35-μm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density JC, the HBT lateral structure parameters have significant effect on Ls but little influence on Q and ω 0, and the larger Ls can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller JC is beneficial for AI to obtain larger Ls, but with a cost of smaller Q and ω 0. In addition, under the fixed collector current IC, the larger the size of HBT is, the larger Ls becomes, but the smaller Q and ω 0 become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.

Key words: SiGe HBT, lateral structure parameters, active inductor

中图分类号:  (Semiconductor devices)

  • 85.30.-z
85.30.Pq (Bipolar transistors) 85.40.Qx (Microcircuit quality, noise, performance, and failure analysis) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))