Realization of a flux-driven memtranstor at room temperature

doi:10.1088/1674-1056/25/2/027703

中国物理B ›› 2016, Vol. 25 ›› Issue (2): 27703-027703.doi: 10.1088/1674-1056/25/2/027703

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Realization of a flux-driven memtranstor at room temperature

Shi-Peng Shen(申世鹏), Da-Shan Shang(尚大山), Yi-Sheng Chai(柴一晟), Young Sun(孙阳)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2015-12-19 修回日期:2015-12-22 出版日期:2016-02-05 发布日期:2016-02-05
通讯作者: Da-Shan Shang E-mail:shangdashan@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grants Nos. 11227405, 11534015, 11274363, and 11374347), and the Natural Science Foundation from the Chinese Academy of Sciences (Grant No. XDB07030200).

Realization of a flux-driven memtranstor at room temperature

Shi-Peng Shen(申世鹏), Da-Shan Shang(尚大山), Yi-Sheng Chai(柴一晟), Young Sun(孙阳)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2015-12-19 Revised:2015-12-22 Online:2016-02-05 Published:2016-02-05
Contact: Da-Shan Shang E-mail:shangdashan@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grants Nos. 11227405, 11534015, 11274363, and 11374347), and the Natural Science Foundation from the Chinese Academy of Sciences (Grant No. XDB07030200).

摘要/Abstract

摘要：

The memtranstor has been proposed to be the fourth fundamental circuit memelement in addition to the memristor, memcapacitor, and meminductor. Here, we demonstrate the memtranstor behavior at room temperature in a device made of the magnetoelectric hexaferrite (Ba_0.5Sr_1.5Co₂Fe₁₁AlO₂₂) where the electric polarization is tunable by external magnetic field. This device shows a nonlinear q-φ relationship with a butterfly-shaped hysteresis loop, in agreement with the anticipated memtranstor behavior. The memtranstor, like other memelements, has a great potential in developing more advanced circuit functionalities.

关键词: fundamental circuit element, magnetoelectric effect, multiferroic, memtranstor, memristor

Abstract:

Key words: fundamental circuit element, magnetoelectric effect, multiferroic, memtranstor, memristor

中图分类号: (Ferroelectricity and antiferroelectricity)

77.80.-e

75.85.+t (Magnetoelectric effects, multiferroics) 75.50.-y (Studies of specific magnetic materials)

申世鹏, 尚大山, 柴一晟, 孙阳. Realization of a flux-driven memtranstor at room temperature[J]. 中国物理B, 2016, 25(2): 27703-027703.

Shi-Peng Shen(申世鹏), Da-Shan Shang(尚大山), Yi-Sheng Chai(柴一晟), Young Sun(孙阳). Realization of a flux-driven memtranstor at room temperature[J]. Chin. Phys. B, 2016, 25(2): 27703-027703.

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Realization of a flux-driven memtranstor at room temperature

Realization of a flux-driven memtranstor at room temperature

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