中国物理B ›› 2016, Vol. 25 ›› Issue (12): 128501-128501.doi: 10.1088/1674-1056/25/12/128501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬)   

  1. Key Laboratory of Microelectronic Devices and Circuits(Ministry of Education) Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2016-06-10 修回日期:2016-07-12 出版日期:2016-12-05 发布日期:2016-12-05
  • 通讯作者: Yuan Wang E-mail:wangyuan@pku.edu.cn
  • 基金资助:

    Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

Li-Zhong Zhang(张立忠), Yuan Wang(王源), Yan-Dong He(何燕冬)   

  1. Key Laboratory of Microelectronic Devices and Circuits(Ministry of Education) Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2016-06-10 Revised:2016-07-12 Online:2016-12-05 Published:2016-12-05
  • Contact: Yuan Wang E-mail:wangyuan@pku.edu.cn
  • Supported by:

    Project supported by the Beijing Municipal Natural Science Foundation, China (Grant No. 4162030) and the National Science and Technology Major Project of China (Grant No. 2013ZX02303002).

摘要:

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

关键词: electrostatic discharge (ESD), diode-triggered silicon controlled rectifier (DTSCR), transmission-line-pulsing (TLP), mathematical modeling

Abstract:

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier (DTSCR) is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

Key words: electrostatic discharge (ESD), diode-triggered silicon controlled rectifier (DTSCR), transmission-line-pulsing (TLP), mathematical modeling

中图分类号:  (Junction diodes)

  • 85.30.Kk
85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 41.20.Cv (Electrostatics; Poisson and Laplace equations, boundary-value problems) 52.35.Fp (Electrostatic waves and oscillations (e.g., ion-acoustic waves))