Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

doi:10.1088/1674-1056/25/12/127303

中国物理B ›› 2016, Vol. 25 ›› Issue (12): 127303-127303.doi: 10.1088/1674-1056/25/12/127303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春)

Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV) Light-Emitting Materials andTechnology of Ministry of Education, Northeast Normal University, Changchun 130024, China

收稿日期:2016-03-15 修回日期:2016-08-05 出版日期:2016-12-05 发布日期:2016-12-05
通讯作者: Zhong-Qiang Wang, Hai-Yang Xu E-mail:wangzq752@nenu.edu.cn;hyxu@nenu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China for Excellent Young Scholars (Grant No. 51422201), the National Natural Science Foundation of China (Grant Nos. 51172041, 51372035, 11304035, 61574031, and 61404026), the National Basic Research Program of China (Grant No. 2012CB933703), the "111" Project, China (Grant No. B13013), the Fund from Jilin Province, China (Grant Nos. 20140520106JH and 20140201008GX), the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130043110004), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2412015KJ008 and 2412016KJ003).

Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春)

Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV) Light-Emitting Materials andTechnology of Ministry of Education, Northeast Normal University, Changchun 130024, China

Received:2016-03-15 Revised:2016-08-05 Online:2016-12-05 Published:2016-12-05
Contact: Zhong-Qiang Wang, Hai-Yang Xu E-mail:wangzq752@nenu.edu.cn;hyxu@nenu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China for Excellent Young Scholars (Grant No. 51422201), the National Natural Science Foundation of China (Grant Nos. 51172041, 51372035, 11304035, 61574031, and 61404026), the National Basic Research Program of China (Grant No. 2012CB933703), the "111" Project, China (Grant No. B13013), the Fund from Jilin Province, China (Grant Nos. 20140520106JH and 20140201008GX), the Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20130043110004), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 2412015KJ008 and 2412016KJ003).

摘要/Abstract

摘要：

In this study, the unipolar resistive switching (URS) and bipolar resistive switching (BRS) are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies (V_O) and metal-Ag conducting filaments (CFs) respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching (RS) characteristics (e.g., forming and switching voltages, reset current and resistance states) between these two modes based on V_O- and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.

关键词: resistive switching, unipolar, bipolar, oxygen vacancy, metal, conductive filament

Abstract:

Key words: resistive switching, unipolar, bipolar, oxygen vacancy, metal, conductive filament

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

77.55.hf (ZnO) 77.22.Jp (Dielectric breakdown and space-charge effects)

马寒露, 王中强, 徐海阳, 张磊, 赵晓宁, 韩曼舒, 马剑钢, 刘益春. Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments[J]. 中国物理B, 2016, 25(12): 127303-127303.

Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春). Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments[J]. Chin. Phys. B, 2016, 25(12): 127303-127303.

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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

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