中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118506-118506.doi: 10.1088/1674-1056/25/11/118506

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢)   

  1. 1 State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China;
    2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
  • 收稿日期:2016-04-19 修回日期:2016-08-12 出版日期:2016-11-05 发布日期:2016-11-05
  • 通讯作者: Yan-Li Pei, Gang Wang E-mail:peiyanli@mail.sysu.edu.cn;stswangg@mail.sysu.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

Jia-Yong Lin(林家勇)1, Yan-Li Pei(裴艳丽)1, Yi Zhuo(卓毅)1, Zi-Min Chen(陈梓敏)2, Rui-Qin Hu(胡锐钦)1, Guang-Shuo Cai(蔡广烁)1, Gang Wang(王钢)1   

  1. 1 State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China;
    2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
  • Received:2016-04-19 Revised:2016-08-12 Online:2016-11-05 Published:2016-11-05
  • Contact: Yan-Li Pei, Gang Wang E-mail:peiyanli@mail.sysu.edu.cn;stswangg@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

RichHTML

0

PDF (PC)

320

赞

摘要： In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400℃ without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V@20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-Ⅲ), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-Ⅱ), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.

关键词: transparent conductive layers, Al-doped ZnO, light-emitting diodes, MOCVD

Abstract: In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400℃ without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V@20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-Ⅲ), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-Ⅱ), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.

Key words: transparent conductive layers, Al-doped ZnO, light-emitting diodes, MOCVD

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
77.55.hf (ZnO) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))