Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-yAs heterojunction tunneling field-effect transistors

doi:10.1088/1674-1056/25/10/108502

中国物理B ›› 2016, Vol. 25 ›› Issue (10): 108502-108502.doi: 10.1088/1674-1056/25/10/108502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Characteristics of cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction tunneling field-effect transistors

Yun-He Guan(关云鹤), Zun-Chao Li(李尊朝), Dong-Xu Luo(骆东旭), Qing-Zhi Meng(孟庆之), Ye-Fei Zhang(张也非)

Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China

收稿日期:2015-12-30 修回日期:2016-05-24 出版日期:2016-10-05 发布日期:2016-10-05
通讯作者: Zun-Chao Li E-mail:zcli@mail.xjtu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176038 and 61474093), the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010103002), and the Technology Development Program of Shaanxi Province, China (Grant No. 2016GY-075).

Characteristics of cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction tunneling field-effect transistors

Yun-He Guan(关云鹤), Zun-Chao Li(李尊朝), Dong-Xu Luo(骆东旭), Qing-Zhi Meng(孟庆之), Ye-Fei Zhang(张也非)

Department of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, China

Received:2015-12-30 Revised:2016-05-24 Online:2016-10-05 Published:2016-10-05
Contact: Zun-Chao Li E-mail:zcli@mail.xjtu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176038 and 61474093), the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010103002), and the Technology Development Program of Shaanxi Province, China (Grant No. 2016GY-075).

摘要/Abstract

摘要： A III-V heterojunction tunneling field-effect transistor (TFET) can enhance the on-state current effectively, and GaAs_xSb_1-x/In_yGa_1-yAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition. In this paper, the performance of the cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction TFET with gate-drain underlap is investigated by numerical simulation. We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing (SS), while increasing source doping concentration and adjusting the composition of GaAs_xSb_1-x/In_yGa_1-yAs can improve the on-state current. In addition, the resonant TFET based on GaAs_xSb_1-x/In_yGa_1-yAs is also studied, and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current, respectively, and is much superior to the conventional TFET.

关键词: tunneling field-effect transistor, surrounding-gate, subthreshold swing, resonant tunneling

Abstract: A III-V heterojunction tunneling field-effect transistor (TFET) can enhance the on-state current effectively, and GaAs_xSb_1-x/In_yGa_1-yAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition. In this paper, the performance of the cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction TFET with gate-drain underlap is investigated by numerical simulation. We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing (SS), while increasing source doping concentration and adjusting the composition of GaAs_xSb_1-x/In_yGa_1-yAs can improve the on-state current. In addition, the resonant TFET based on GaAs_xSb_1-x/In_yGa_1-yAs is also studied, and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current, respectively, and is much superior to the conventional TFET.

Key words: tunneling field-effect transistor, surrounding-gate, subthreshold swing, resonant tunneling

中图分类号: (Junction breakdown and tunneling devices (including resonance tunneling devices))

85.30.Mn

81.05.Ea (III-V semiconductors) 85.30.Tv (Field effect devices)

关云鹤, 李尊朝, 骆东旭, 孟庆之, 张也非. Characteristics of cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction tunneling field-effect transistors[J]. 中国物理B, 2016, 25(10): 108502-108502.

Yun-He Guan(关云鹤), Zun-Chao Li(李尊朝), Dong-Xu Luo(骆东旭), Qing-Zhi Meng(孟庆之), Ye-Fei Zhang(张也非). Characteristics of cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction tunneling field-effect transistors[J]. Chin. Phys. B, 2016, 25(10): 108502-108502.

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Characteristics of cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction tunneling field-effect transistors

Characteristics of cylindrical surrounding-gate GaAs_xSb_1-x/In_yGa_1-yAs heterojunction tunneling field-effect transistors

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