Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

doi:10.1088/1674-1056/24/9/096803

中国物理B ›› 2015, Vol. 24 ›› Issue (9): 96803-096803.doi: 10.1088/1674-1056/24/9/096803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

谢应涛^{a b}, 欧阳世宏^{a b}, 王东平^{a b}, 朱大龙^{a b}, 许鑫^{a b}, 谭特^{a b}, 方汉铿^{a b}

a Department of Electronic Engineering, Center for Opto-Electronic Materials and Devices, Shanghai Jiao Tong University, Shanghai 200240, China;
b National Engineering Laboratory for TFT-LCD Key Materials and Technologies, Shanghai 200240, China

收稿日期:2015-01-13 修回日期:2015-05-04 出版日期:2015-09-05 发布日期:2015-09-05
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2013CB328803).

Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

Xie Ying-Tao (谢应涛)^{a b}, Ouyang Shi-Hong (欧阳世宏)^{a b}, Wang Dong-Ping (王东平)^{a b}, Zhu Da-Long (朱大龙)^{a b}, Xu Xin (许鑫)^{a b}, Tan Te (谭特)^{a b}, Fong Hon-Hang (方汉铿)^{a b}

a Department of Electronic Engineering, Center for Opto-Electronic Materials and Devices, Shanghai Jiao Tong University, Shanghai 200240, China;
b National Engineering Laboratory for TFT-LCD Key Materials and Technologies, Shanghai 200240, China

Received:2015-01-13 Revised:2015-05-04 Online:2015-09-05 Published:2015-09-05
Contact: Fong Hon-Hang E-mail:hhfong@sjtu.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2013CB328803).

摘要/Abstract

摘要： An efficient interface modification is introduced to improve the performance of polymeric thin film transistors. This efficient interface modification is first achieved by 4-fluorothiophenol (4-FTP) self-assembled monolayers (SAM) to chemically treat the silver source-drain (S/D) contacts while the silicon oxide (SiO₂) dielectric interface is further primed by either hexamethyldisilazane (HMDS) or octyltrichlorosilane (OTS-C8). Results show that contact resistance is the dominant factor that limits the field effect mobility of the PTDPPTFT4 transistors. With proper surface modification applied to both the dielectric surface and the bottom contacts, the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors were significantly improved from 0.15 cm²·V^-1·s^-1 to 0.91 cm²·V^-1·s^-1.

关键词: polymeric thin film transistors, orthogonal self-assembly, chemically modified gate dielectric, chemically modified silver bottom contacts

Abstract: An efficient interface modification is introduced to improve the performance of polymeric thin film transistors. This efficient interface modification is first achieved by 4-fluorothiophenol (4-FTP) self-assembled monolayers (SAM) to chemically treat the silver source-drain (S/D) contacts while the silicon oxide (SiO₂) dielectric interface is further primed by either hexamethyldisilazane (HMDS) or octyltrichlorosilane (OTS-C8). Results show that contact resistance is the dominant factor that limits the field effect mobility of the PTDPPTFT4 transistors. With proper surface modification applied to both the dielectric surface and the bottom contacts, the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors were significantly improved from 0.15 cm²·V^-1·s^-1 to 0.91 cm²·V^-1·s^-1.

Key words: polymeric thin film transistors, orthogonal self-assembly, chemically modified gate dielectric, chemically modified silver bottom contacts

中图分类号: (Polymers, organics)

68.35.bm

68.47.De (Metallic surfaces) 68.47.Gh (Oxide surfaces)

谢应涛, 欧阳世宏, 王东平, 朱大龙, 许鑫, 谭特, 方汉铿. Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces[J]. 中国物理B, 2015, 24(9): 96803-096803.

Xie Ying-Tao (谢应涛), Ouyang Shi-Hong (欧阳世宏), Wang Dong-Ping (王东平), Zhu Da-Long (朱大龙), Xu Xin (许鑫), Tan Te (谭特), Fong Hon-Hang (方汉铿). Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces[J]. Chin. Phys. B, 2015, 24(9): 96803-096803.

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Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

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