中国物理B ›› 2015, Vol. 24 ›› Issue (7): 78105-078105.doi: 10.1088/1674-1056/24/7/078105

• RAPID COMMUNICATION • 上一篇    下一篇

Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

史振亮, 季云, 于威, 杨彦斌, 丛日东, 陈英娟, 李晓苇, 傅广生   

  1. Hebei Key Laboratory of Optic-Electronic Information Material, College of PhysicsScience and Technology, Hebei University, Baoding 071002, China
  • 收稿日期:2015-01-07 修回日期:2015-03-25 出版日期:2015-07-05 发布日期:2015-07-05
  • 基金资助:
    Project supported by the Key Basic Research Project of Hebei Province, China (Grant Nos. 12963930D and 12963929D), the Natural Science Foundation of Hebei Province, China (Grant Nos. F2013201250 and E2012201059), and the Science and Technology Research Projects of the Education Department of Hebei Province, China (Grant No. ZH2012030).

Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer

Shi Zhen-Liang (史振亮), Ji Yun (季云), Yu Wei (于威), Yang Yan-Bin (杨彦斌), Cong Ri-Dong (丛日东), Chen Ying-Juan (陈英娟), Li Xiao-Wei (李晓苇), Fu Guang-Sheng (傅广生)   

  1. Hebei Key Laboratory of Optic-Electronic Information Material, College of PhysicsScience and Technology, Hebei University, Baoding 071002, China
  • Received:2015-01-07 Revised:2015-03-25 Online:2015-07-05 Published:2015-07-05
  • Contact: Yu Wei, Li Xiao-Wei E-mail:hbuyuwei@126.com;laser@hbu.edu.cn
  • Supported by:
    Project supported by the Key Basic Research Project of Hebei Province, China (Grant Nos. 12963930D and 12963929D), the Natural Science Foundation of Hebei Province, China (Grant Nos. F2013201250 and E2012201059), and the Science and Technology Research Projects of the Education Department of Hebei Province, China (Grant No. ZH2012030).

RichHTML

0

PDF (PC)

331

赞

摘要： Microcrystalline silicon (μc-Si:H) solar cell with graded band gap microcrystalline silicon oxide (μc-SiOx:H) buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2× 1012 cm-2 to 5.0× 1011 cm-2. This graded buffer layer allows to simplify the deposition process for the μc-Si:H solar cell application.

关键词: graded SiOx buffer layer, p/i interface, solar cells

Abstract: Microcrystalline silicon (μc-Si:H) solar cell with graded band gap microcrystalline silicon oxide (μc-SiOx:H) buffer layer is prepared by plasma enhanced chemical vapor deposition and exhibits improved performance compared with the cell without it. The buffer layer moderates the band gap mismatch by reducing the barrier of the p/i interface, which promotes the nucleation of the i-layer and effectively eliminates the incubation layer, and then enhances the collection efficiency of the cell in the short wavelength region of the spectrum. The p/i interface defect density also decreases from 2.2× 1012 cm-2 to 5.0× 1011 cm-2. This graded buffer layer allows to simplify the deposition process for the μc-Si:H solar cell application.

Key words: graded SiOx buffer layer, p/i interface, solar cells

中图分类号:  (Nanocrystalline materials)

  • 81.07.Bc
68.37.-d (Microscopy of surfaces, interfaces, and thin films) 88.40.H- (Solar cells (photovoltaics))