中国物理B ›› 2015, Vol. 24 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/24/5/058502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors

浮宗元a, 张剑驰b, 胡静航a, 蒋玉龙b, 丁士进b, 朱国栋a   

  1. a Department of Materials Science, Fudan University, Shanghai 200433, China;
    b School Microelectronics, Fudan University, Shanghai 200433, China
  • 收稿日期:2014-11-03 修回日期:2014-11-24 出版日期:2015-05-05 发布日期:2015-05-05
  • 基金资助:
    Project supported by the National Key Technologies R&D Program, China (Grant No. 2009ZX02302-002), the National Natural Science Foundation of China (Grant Nos. 61376108, 61076076, and 61076068), NSAF, China (Grant No. U1430106), the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13NM1400600), and Zhuo Xue Plan in Fudan University, China.

Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors

Fu Zong-Yuan (浮宗元)a, Zhang Jian-Chi (张剑驰)b, Hu Jing-Hang (胡静航)a, Jiang Yu-Long (蒋玉龙)b, Ding Shi-Jin (丁士进)b, Zhu Guo-Dong (朱国栋)a   

  1. a Department of Materials Science, Fudan University, Shanghai 200433, China;
    b School Microelectronics, Fudan University, Shanghai 200433, China
  • Received:2014-11-03 Revised:2014-11-24 Online:2015-05-05 Published:2015-05-05
  • Contact: Jiang Yu-Long, Ding Shi-Jin, Zhu Guo-Dong E-mail:yljiang@fudan.edu.cn;sjding@fudan.edu.cn;gdzhu@fudan.edu.cn
  • About author:85.50.Gk; 77.55.dj; 77.84.Jd
  • Supported by:
    Project supported by the National Key Technologies R&D Program, China (Grant No. 2009ZX02302-002), the National Natural Science Foundation of China (Grant Nos. 61376108, 61076076, and 61076068), NSAF, China (Grant No. U1430106), the Science and Technology Commission of Shanghai Municipality, China (Grant No. 13NM1400600), and Zhuo Xue Plan in Fudan University, China.

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摘要： Organic ferroelectric field-effect transistors (OFeFETs) are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.

关键词: organic ferroelectric field-effect transistors, polarization fatigue, ferroelectric switching

Abstract: Organic ferroelectric field-effect transistors (OFeFETs) are regarded as a promising technology for low-cost flexible memories. However, the electrical instability is still a critical obstacle, which limits the commercialization process. Based on already established models for polarization in ferroelectrics and charge transport in OFeFETs, simulation work is performed to determine the influence of polarization fatigue and ferroelectric switching transient on electrical characteristics in OFeFETs. The polarization fatigue results in the decrease of the on-state drain current and the memory window width and thus degrades the memory performance. The output measurements during the ferroelectric switching process show a hysteresis due to the instable polarization. In the on/off measurements, a large writing/erasing pulse frequency weakens the polarization modulation and thus results in a small separation between on- and off-state drain currents. According to the electrical properties of the ferroelectric layer, suggestions are given to obtain optimal electrical characterization for OFeFETs.

Key words: organic ferroelectric field-effect transistors, polarization fatigue, ferroelectric switching

中图分类号:  (Non-volatile ferroelectric memories)

  • 85.50.Gk
77.55.dj (For nonsilicon electronics (Ge, III-V, II-VI, organic electronics)) 77.84.Jd (Polymers; organic compounds)