Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

doi:10.1088/1674-1056/24/11/117304

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 117304-117304.doi: 10.1088/1674-1056/24/11/117304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

韩超^a, 张玉明^a, 宋庆文^{a b}, 汤晓燕^a, 张义门^a, 郭辉^a, 王悦湖^a

a School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China

收稿日期:2015-05-05 修回日期:2015-07-10 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Zhang Yu-Ming E-mail:zhangym@xidian.edu.cn
基金资助:
Project supported by the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), the National Natural Science Foundation of China (Grant No. 61234006), the Natural Science Foundation of ShaanXi Province, China (Grant No. 2013JQ8012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), and the Specific Project of the Core Devices, China (Grant No. 2013ZX0100100-004).

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

Han Chao (韩超)^a, Zhang Yu-Ming (张玉明)^a, Song Qing-Wen (宋庆文)^{a b}, Tang Xiao-Yan (汤晓燕)^a, Zhang Yi-Men (张义门)^a, Guo Hui (郭辉)^a, Wang Yue-Hu (王悦湖)^a

a School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi’an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China

Received:2015-05-05 Revised:2015-07-10 Online:2015-11-05 Published:2015-11-05
Contact: Zhang Yu-Ming E-mail:zhangym@xidian.edu.cn
Supported by:
Project supported by the Key Specific Projects of Ministry of Education of China (Grant No. 625010101), the National Natural Science Foundation of China (Grant No. 61234006), the Natural Science Foundation of ShaanXi Province, China (Grant No. 2013JQ8012), the Doctoral Fund of Ministry of Education of China (Grant No. 20130203120017), and the Specific Project of the Core Devices, China (Grant No. 2013ZX0100100-004).

摘要/Abstract

摘要： This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.% Al. The specific contact resistance (SCR) is obtained to be as low as 2.6×10^-6 Ω·cm² for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000 ℃. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti₃SiC₂ dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti₃SiC₂ layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.

关键词: 4H-SiC, p-type, ohmic contact, alloying, step bunching

Abstract: This paper reports the performances of Ti/Al based ohmic contacts fabricated on highly doped p-type 4H-SiC epitaxial layer which has a severe step-bunching surface. Different contact schemes are investigated based on the Al:Ti composition with no more than 50 at.% Al. The specific contact resistance (SCR) is obtained to be as low as 2.6×10^-6 Ω·cm² for the bilayered Ti(100 nm)/Al(100 nm) contact treated with 3 min rapid thermal annealing (RTA) at 1000 ℃. The microstructure analyses examined by physical and chemical characterization techniques reveal an alloy-assisted ohmic contact formation mechanism, i.e., a high degree of alloying plays a decisive role in forming the interfacial ternary Ti₃SiC₂ dominating the ohmic behavior of the Ti/Al based contact. Furthermore, a globally covered Ti₃SiC₂ layer with (0001)-oriented texture can be formed, regardless of the surface step bunching as well as its structural evolution during the metallization annealing.

Key words: 4H-SiC, p-type, ohmic contact, alloying, step bunching

中图分类号: (Contact resistance, contact potential)

73.40.Cg

68.37.-d (Microscopy of surfaces, interfaces, and thin films)

韩超, 张玉明, 宋庆文, 汤晓燕, 张义门, 郭辉, 王悦湖. Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface[J]. 中国物理B, 2015, 24(11): 117304-117304.

Han Chao (韩超), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Guo Hui (郭辉), Wang Yue-Hu (王悦湖). Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface[J]. Chin. Phys. B, 2015, 24(11): 117304-117304.

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Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

Low specific contact resistance on epitaxial p-type 4H-SiC with a step-bunching surface

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