中国物理B ›› 2014, Vol. 23 ›› Issue (9): 97703-097703.doi: 10.1088/1674-1056/23/9/097703

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Li-N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method

谢建生, 陈强   

  1. Functional Materials Laboratory, Changzhou University, Changzhou 213016, China
  • 收稿日期:2014-03-21 修回日期:2014-05-16 出版日期:2014-09-15 发布日期:2014-09-15

Li-N dual-doped ZnO thin films prepared by an ion beam enhanced deposition method

Xie Jian-Sheng (谢建生), Chen Qiang (陈强)   

  1. Functional Materials Laboratory, Changzhou University, Changzhou 213016, China
  • Received:2014-03-21 Revised:2014-05-16 Online:2014-09-15 Published:2014-09-15
  • Contact: Chen Qiang E-mail:dishuimolan@163.com

摘要: Li-N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition (IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO:(Li,N) films exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site (LiZn) acceptor. N doping in ZnO can forms the Lii-NO complex, which depresses the compensation of Li occupy interstitial site (Lii) donors for LiZn acceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak (381 nm) is due to the shallow acceptors LiZn in the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.

关键词: ZnO, ion beam enhanced deposition, photoluminescence

Abstract: Li-N dual-doped ZnO films [ZnO:(Li,N)] with Li doping concentrations of 3 at.%-5 at.% were grown on a glass substrate using an ion beam enhanced deposition (IBED) method. An optimal p-type ZnO:(Li,N) film with the resistivity of 11.4 Ω·cm was obtained by doping 4 at.% of Li and 5 sccm flow ratio of N2. The ZnO:(Li,N) films exhibited a wurtzite structure and good transmittance in the visible region. The p-type conductive mechanism of ZnO:(Li,N) films are attributed to the Li substitute Zn site (LiZn) acceptor. N doping in ZnO can forms the Lii-NO complex, which depresses the compensation of Li occupy interstitial site (Lii) donors for LiZn acceptor and helps to achieve p-type ZnO:(Li,N) films. Room temperature photoluminescence measurements indicate that the UV peak (381 nm) is due to the shallow acceptors LiZn in the p-type ZnO:(Li,N) films. The band gap of the ZnO:(Li,N) films has a red-shift after p-type doping.

Key words: ZnO, ion beam enhanced deposition, photoluminescence

中图分类号:  (ZnO)

  • 77.55.hf
81.15.Jj (Ion and electron beam-assisted deposition; ion plating) 78.55.-m (Photoluminescence, properties and materials)