Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

doi:10.1088/1674-1056/23/9/097305

›› 2014, Vol. 23 ›› Issue (9): 97305-097305.doi: 10.1088/1674-1056/23/9/097305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

赵胜雷^a, 王媛^b, 杨晓蕾^b, 林志宇^a, 王冲^a, 张进成^a, 马晓华^{a b}, 郝跃^a

a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

收稿日期:2014-01-02 修回日期:2014-03-21 出版日期:2014-09-15 发布日期:2014-09-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61106106) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Zhao Sheng-Lei (赵胜雷)^a, Wang Yuan (王媛)^b, Yang Xiao-Lei (杨晓蕾)^b, Lin Zhi-Yu (林志宇)^a, Wang Chong (王冲)^a, Zhang Jin-Cheng (张进成)^a, Ma Xiao-Hua (马晓华)^{a b}, Hao Yue (郝跃)^a

a Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

Received:2014-01-02 Revised:2014-03-21 Online:2014-09-15 Published:2014-09-15
Contact: Hao Yue E-mail:yhao@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61106106) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

摘要/Abstract

摘要： In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors (HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage (V_RB) and the forward blocking voltage (V_FB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. V_RB and V_FB were improved from-67 V and 134 V to-653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.

关键词: AlGaN/GaN high-electron mobility transistors, reverse blocking capability, drain field plate, Schottky drain

Abstract: In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors (HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage (V_RB) and the forward blocking voltage (V_FB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. V_RB and V_FB were improved from-67 V and 134 V to-653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.

Key words: AlGaN/GaN high-electron mobility transistors, reverse blocking capability, drain field plate, Schottky drain

中图分类号: (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

73.40.Kp

73.61.Ey (III-V semiconductors) 78.30.Fs (III-V and II-VI semiconductors)

赵胜雷, 王媛, 杨晓蕾, 林志宇, 王冲, 张进成, 马晓华, 郝跃. Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors[J]. , 2014, 23(9): 97305-097305.

Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors[J]. Chin. Phys. B, 2014, 23(9): 97305-097305.

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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

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