Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

doi:10.1088/1674-1056/23/9/096802

中国物理B ›› 2014, Vol. 23 ›› Issue (9): 96802-096802.doi: 10.1088/1674-1056/23/9/096802

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

赵云^{a b c}, 王钢^{b c}, 杨怀超^{b c}, 安铁雷^{a b}, 陈闽江^{b c}, 余芳^{b c}, 陶立^{b c}, 羊建坤^a, 魏同波^a, 段瑞飞^a, 孙连峰^b

a Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b National Center for Nanoscience and Technology, Beijing 100190, China;
c University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2013-12-29 修回日期:2014-03-21 出版日期:2014-09-15 发布日期:2014-09-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274040 and 51102226), the National Basic Research Program of China (Grant No. 2011CB301904), the National High Technology Program of China (Grant Nos. 2011AA03A103 and 2011AA03A105), the National Science Foundation of China (Grant Nos. 10774032 and 90921001), and the Key Knowledge Innovation Project of the Chinese Academy of Sciences on Water Science Research, Instrument Developing Project of the Chinese Academy of Sciences (Grant No. Y2010031).

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Zhao Yun (赵云)^{a b c}, Wang Gang (王钢)^{b c}, Yang Huai-Chao (杨怀超)^{b c}, An Tie-Lei (安铁雷)^{a b}, Chen Min-Jiang (陈闽江)^{b c}, Yu Fang (余芳)^{b c}, Tao Li (陶立)^{b c}, Yang Jian-Kun (羊建坤)^a, Wei Tong-Bo (魏同波)^a, Duan Rui-Fei (段瑞飞)^a, Sun Lian-Feng (孙连峰)^b

a Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b National Center for Nanoscience and Technology, Beijing 100190, China;
c University of Chinese Academy of Sciences, Beijing 100049, China

Received:2013-12-29 Revised:2014-03-21 Online:2014-09-15 Published:2014-09-15
Contact: Duan Rui-Fei, Sun Lian-Feng E-mail:duanrf@semi.ac.cn;slf@nanoctr.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274040 and 51102226), the National Basic Research Program of China (Grant No. 2011CB301904), the National High Technology Program of China (Grant Nos. 2011AA03A103 and 2011AA03A105), the National Science Foundation of China (Grant Nos. 10774032 and 90921001), and the Key Knowledge Innovation Project of the Chinese Academy of Sciences on Water Science Research, Instrument Developing Project of the Chinese Academy of Sciences (Grant No. Y2010031).

摘要/Abstract

摘要： Graphene on gallium nitride (GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5-6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1 Ω/square, which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.

关键词: graphene, photoluminescence, gallium nitride, chemical vapor deposition, Raman spectroscopy

Abstract: Graphene on gallium nitride (GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graphene on GaN without an extra catalyst by chemical vapor deposition. Raman spectra indicate that the graphene films are uniform and about 5-6 layers in thickness. Meanwhile, the effects of growth temperatures on the growth of graphene films are systematically studied, of which 950℃ is found to be the optimum growth temperature. The sheet resistance of the grown graphene is 41.1 Ω/square, which is close to the lowest sheet resistance of transferred graphene reported. The mechanism of graphene growth on GaN is proposed and discussed in detail. XRD spectra and photoluminescence spectra indicate that the quality of GaN epi-layers will not be affected after the growth of graphene.

Key words: graphene, photoluminescence, gallium nitride, chemical vapor deposition, Raman spectroscopy

中图分类号: (Graphene films)

68.65.Pq

78.55.Cr (III-V semiconductors) 81.05.ue (Graphene) 81.15.Kk (Vapor phase epitaxy; growth from vapor phase)

赵云, 王钢, 杨怀超, 安铁雷, 陈闽江, 余芳, 陶立, 羊建坤, 魏同波, 段瑞飞, 孙连峰. Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst[J]. 中国物理B, 2014, 23(9): 96802-096802.

Zhao Yun (赵云), Wang Gang (王钢), Yang Huai-Chao (杨怀超), An Tie-Lei (安铁雷), Chen Min-Jiang (陈闽江), Yu Fang (余芳), Tao Li (陶立), Yang Jian-Kun (羊建坤), Wei Tong-Bo (魏同波), Duan Rui-Fei (段瑞飞), Sun Lian-Feng (孙连峰). Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst[J]. Chin. Phys. B, 2014, 23(9): 96802-096802.

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Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst

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