›› 2014, Vol. 23 ›› Issue (9): 96103-096103.doi: 10.1088/1674-1056/23/9/096103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Uniaxial strain-dependent magnetic and electronic properties of(Ga,Mn)As nanowires

张晨辉a b, 向钢a b, 兰木a b, 张析a b   

  1. a College of Physical Science and Technology, Sichuan University, Chengdu 610064, China;
    b Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China
  • 收稿日期:2014-02-19 修回日期:2014-05-25 出版日期:2014-09-15 发布日期:2014-09-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11004141 and 11174212), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. 11-0351), and the Scientific Research Starting Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.

Uniaxial strain-dependent magnetic and electronic properties of(Ga,Mn)As nanowires

Zhang Chen-Hui (张晨辉)a b, Xiang Gang (向钢)a b, Lan Mu (兰木)a b, Zhang Xi (张析)a b   

  1. a College of Physical Science and Technology, Sichuan University, Chengdu 610064, China;
    b Key Laboratory of High Energy Density Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China
  • Received:2014-02-19 Revised:2014-05-25 Online:2014-09-15 Published:2014-09-15
  • Contact: Xiang Gang, Zhang Xi E-mail:gxiang@scu.edu.cn;xizhang@scu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11004141 and 11174212), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. 11-0351), and the Scientific Research Starting Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.

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摘要： Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite (Ga,Mn)As nanowires (NWs) grown along the [0001] direction were investigated based on density functional theory (DFT). We found that (Ga,Mn)As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the NWs. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.

关键词: (Ga, Mn)As, nanowire, strain, dilute magnetic semiconductors

Abstract: Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite (Ga,Mn)As nanowires (NWs) grown along the [0001] direction were investigated based on density functional theory (DFT). We found that (Ga,Mn)As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the NWs. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.

Key words: dilute magnetic semiconductors, (Ga, Mn)As, nanowire, strain

中图分类号:  (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

  • 61.46.Km
75.75.-c (Magnetic properties of nanostructures) 73.61.Ey (III-V semiconductors)