A novel high performance TFS SJ IGBT with a buried oxide layer

doi:10.1088/1674-1056/23/8/088504

›› 2014, Vol. 23 ›› Issue (8): 88504-088504.doi: 10.1088/1674-1056/23/8/088504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A novel high performance TFS SJ IGBT with a buried oxide layer

张金平, 李泽宏, 张波, 李肇基

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2014-01-02 修回日期:2014-02-19 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the National Science and Technology Major Project, China (Grant No. 2011ZX02504-003), the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2011J024), and the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201301).

A novel high performance TFS SJ IGBT with a buried oxide layer

Zhang Jin-Ping (张金平), Li Ze-Hong (李泽宏), Zhang Bo (张波), Li Zhao-Ji (李肇基)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2014-01-02 Revised:2014-02-19 Online:2014-08-15 Published:2014-08-15
Contact: Zhang Jin-Ping E-mail:jinpingzhang@uestc.edu.cn
Supported by:
Project supported by the National Science and Technology Major Project, China (Grant No. 2011ZX02504-003), the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2011J024), and the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices, China (Grant No. KFJJ201301).

摘要/Abstract

摘要： A novel high performance trench field stop (TFS) superjunction (SJ) insulated gate bipolar transistor (IGBT) with a buried oxide (BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT (Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop (V_ce(on)) and an improved tradeoff between V_ce(on) and turn-off loss (E_off), with no breakdown voltage (BV) degraded. The results show that with the spacing between the gate and the BO layer W_o=0.2 μm, the thickness of the BO layer L_o=0.2 μm, the thickness of the drift region L_d=90 μm, the half width and doping concentration of the N- and P-pillars W_n=W_p=2.5 μm and N_n=N_p=3× 10¹⁵ cm^-3, the V_ce(on) and E_off of the proposed structure are 1.08 V and 2.81 mJ/cm² with the collector doping concentration N_c=1× 10¹⁸ cm^-3 and 1.12 V and 1.73 mJ/cm² with N_c=5× 10¹⁷ cm^-3, respectively. However, with the same device parameters, the V_ce(on) and E_off for the Conv-SJ are 1.81 V and 2.88 mJ/cm² with N_c=1× 10¹⁸ cm^-3 and 1.98 V and 2.82 mJ/cm² with N_c=5× 10¹⁷ cm^-3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.

关键词: insulated gate bipolar transistor, trench field stop, superjunction, buried oxide layer

Abstract: A novel high performance trench field stop (TFS) superjunction (SJ) insulated gate bipolar transistor (IGBT) with a buried oxide (BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT (Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop (V_ce(on)) and an improved tradeoff between V_ce(on) and turn-off loss (E_off), with no breakdown voltage (BV) degraded. The results show that with the spacing between the gate and the BO layer W_o=0.2 μm, the thickness of the BO layer L_o=0.2 μm, the thickness of the drift region L_d=90 μm, the half width and doping concentration of the N- and P-pillars W_n=W_p=2.5 μm and N_n=N_p=3× 10¹⁵ cm^-3, the V_ce(on) and E_off of the proposed structure are 1.08 V and 2.81 mJ/cm² with the collector doping concentration N_c=1× 10¹⁸ cm^-3 and 1.12 V and 1.73 mJ/cm² with N_c=5× 10¹⁷ cm^-3, respectively. However, with the same device parameters, the V_ce(on) and E_off for the Conv-SJ are 1.81 V and 2.88 mJ/cm² with N_c=1× 10¹⁸ cm^-3 and 1.98 V and 2.82 mJ/cm² with N_c=5× 10¹⁷ cm^-3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.

Key words: insulated gate bipolar transistor, trench field stop, superjunction, buried oxide layer

中图分类号: (Semiconductor devices)

85.30.-z

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Pq (Bipolar transistors) 85.30.Tv (Field effect devices)

张金平, 李泽宏, 张波, 李肇基. A novel high performance TFS SJ IGBT with a buried oxide layer[J]. , 2014, 23(8): 88504-088504.

Zhang Jin-Ping (张金平), Li Ze-Hong (李泽宏), Zhang Bo (张波), Li Zhao-Ji (李肇基). A novel high performance TFS SJ IGBT with a buried oxide layer[J]. Chin. Phys. B, 2014, 23(8): 88504-088504.

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A novel high performance TFS SJ IGBT with a buried oxide layer

A novel high performance TFS SJ IGBT with a buried oxide layer

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