›› 2014, Vol. 23 ›› Issue (8): 88112-088112.doi: 10.1088/1674-1056/23/8/088112

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature

陶平a, 黄磊a, Cheng H Hb, 王焕华c, 吴小山a   

  1. a Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;
    b National Taiwan University, Center for Condensed Matter Sciences, Taipei 106, Taiwan, China;
    c Beijing Synchrotron Radiation Facility (BSRF), Institute of High Energy Physics, Beijing 100049, China
  • 收稿日期:2013-11-09 修回日期:2014-03-09 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11274153, 11204124, and 51202108) and the National Key Projects for Basic Research of China (Grant No. 2010CB923404).

Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature

Tao Ping (陶平)a, Huang Lei (黄磊)a, Cheng H Hb, Wang Huan-Hua (王焕华)c, Wu Xiao-Shan (吴小山)a   

  1. a Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China;
    b National Taiwan University, Center for Condensed Matter Sciences, Taipei 106, Taiwan, China;
    c Beijing Synchrotron Radiation Facility (BSRF), Institute of High Energy Physics, Beijing 100049, China
  • Received:2013-11-09 Revised:2014-03-09 Online:2014-08-15 Published:2014-08-15
  • Contact: Wu Xiao-Shan E-mail:xswu@nju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11274153, 11204124, and 51202108) and the National Key Projects for Basic Research of China (Grant No. 2010CB923404).

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摘要： We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.

关键词: GeSn films, high resolution X-ray diffraction, fully-strained, Raman measurements

Abstract: We characterize the structures of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) by molecular-beam epitaxy at low temperature. The results show that Ge1-xSnx films are fully strained even at high Sn composition. The in-plane lattice parameters remain exactly the same as that of the substrate. Depth sensitivity analysis of the lattice parameters indicates that the strains of the epitaxial films are all in homogeneity. The films are fully strained. Poisson ratios, the force constants for the bonds between Ge and Sn are estimated and discussed in the present paper. Raman results show Ge-Ge, Ge-Sn, Sn-Sn vibrational modes. The Sn-Sn bond aggregation may respond to the high quality of our films. The fully strained epitaxy films with high content of Sn may be useful in designing the high quality GeSn films.

Key words: GeSn films, high resolution X-ray diffraction, fully-strained, Raman measurements

中图分类号:  (Methods of deposition of films and coatings; film growth and epitaxy)

  • 81.15.-z
81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 68.55.-a (Thin film structure and morphology) 68.55.ag (Semiconductors)