Complete coverage of reduced graphene oxide on silicon dioxide substrates

doi:10.1088/1674-1056/23/8/088104

›› 2014, Vol. 23 ›› Issue (8): 88104-088104.doi: 10.1088/1674-1056/23/8/088104

• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇下一篇

Complete coverage of reduced graphene oxide on silicon dioxide substrates

HuangJHuang Jingfeng^{a b}, Melanie Larisika^{c d}, Chen Hu^{a b}, Steve Faulkner^e, Myra A. Nimmo^{b e}, Christoph Nowak^{c d}, Alfred Tok Iing Yoong^{a b}

a School of Materials Science and Engineering, Nanyang Technological University, Blk N4.1, Singapore 639798;
b Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798;
c Austrian Institute of Technology (AIT) GmbH, Donau-City Str. 1, Vienna, 1220, Austria;
d Center for Biomimetic Sensor Science, 50 Nanyang Drive, Singapore 637553;
e School of Sport, Exercise and Health Sciences, Loughborough University, JB.1.07, Leicestershire, United Kingdom LE113TU

收稿日期:2013-09-04 修回日期:2014-02-18 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the Institute for Sports Research (ISR) of Nanyang Technological University (NTU), the National Institute for Health Research (NIHR) Diet, Lifestyle & Physical Activity Biomedical Research Unit based at University Hospitals of Leicester and Loughborough University, and the International Graduate School Bio-Nano-Tech; a Joint Ph D Program of University of Natural Resources and Life Sciences Vienna (BOKU), the Austrian Institute of Technology (AIT) and NTU.

Complete coverage of reduced graphene oxide on silicon dioxide substrates

Huang Jingfeng^{a b}, Melanie Larisika^{c d}, Chen Hu^{a b}, Steve Faulkner^e, Myra A. Nimmo^{b e}, Christoph Nowak^{c d}, Alfred Tok Iing Yoong^{a b}

a School of Materials Science and Engineering, Nanyang Technological University, Blk N4.1, Singapore 639798;
b Institute for Sports Research, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798;
c Austrian Institute of Technology (AIT) GmbH, Donau-City Str. 1, Vienna, 1220, Austria;
d Center for Biomimetic Sensor Science, 50 Nanyang Drive, Singapore 637553;
e School of Sport, Exercise and Health Sciences, Loughborough University, JB.1.07, Leicestershire, United Kingdom LE113TU

Received:2013-09-04 Revised:2014-02-18 Online:2014-08-15 Published:2014-08-15
Contact: Alfred Tok Iing Yoong E-mail:MIYTok@ntu.edu.sg
Supported by:
Project supported by the Institute for Sports Research (ISR) of Nanyang Technological University (NTU), the National Institute for Health Research (NIHR) Diet, Lifestyle & Physical Activity Biomedical Research Unit based at University Hospitals of Leicester and Loughborough University, and the International Graduate School Bio-Nano-Tech; a Joint Ph D Program of University of Natural Resources and Life Sciences Vienna (BOKU), the Austrian Institute of Technology (AIT) and NTU.

摘要/Abstract

摘要： Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (< US$1) and portability (millimetre scale). However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition (CVD) post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.

关键词: graphene oxide, reduced graphene oxide, graphene growth, field effect transistor

Abstract: Reduced graphene oxide (RGO) has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost (< US$1) and portability (millimetre scale). However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition (CVD) post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.

Key words: graphene oxide, reduced graphene oxide, graphene growth, field effect transistor

中图分类号: (Graphene)

81.05.ue

68.65.Pq (Graphene films) 85.30.Tv (Field effect devices) 68.55.ag (Semiconductors)

HuangJHuang Jingfeng, Melanie Larisika, Chen Hu, Steve Faulkner, Myra A. Nimmo, Christoph Nowak, Alfred Tok Iing Yoong. Complete coverage of reduced graphene oxide on silicon dioxide substrates[J]. , 2014, 23(8): 88104-088104.

Huang Jingfeng, Melanie Larisika, Chen Hu, Steve Faulkner, Myra A. Nimmo, Christoph Nowak, Alfred Tok Iing Yoong. Complete coverage of reduced graphene oxide on silicon dioxide substrates[J]. Chin. Phys. B, 2014, 23(8): 88104-088104.

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Complete coverage of reduced graphene oxide on silicon dioxide substrates

Complete coverage of reduced graphene oxide on silicon dioxide substrates

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