›› 2014, Vol. 23 ›› Issue (8): 87804-087804.doi: 10.1088/1674-1056/23/8/087804

• SPECIAL TOPI—International Conference on Nanoscience & Technology, China 2013 • 上一篇    下一篇

Thermal effect of Ge2Sb2Te5 in phase change memory device

李俊焘a b, 刘波a, 宋志棠a, 任堃a b, 朱敏a b, 徐佳c, 任佳栋c, 冯高明c, 任万春c, 童浩c   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    b University of the Chinese Academy of Sciences, Beijing 100049, China;
    c Semiconductor Manufacturing International Corporation, Shanghai 201203, China
  • 收稿日期:2013-09-04 修回日期:2014-03-21 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001), and the Funds from the Science and Technology Council of Shanghai, China (Grant No. 12nm0503701).

Thermal effect of Ge2Sb2Te5 in phase change memory device

Li Jun-Tao (李俊焘)a b, Liu Bo (刘波)a, Song Zhi-Tang (宋志棠)a, Ren Kun (任堃)a b, Zhu Min (朱敏)a b, Xu Jia (徐佳)c, Ren Jia-Dong (任佳栋)c, Feng Gao-Ming (冯高明)c, Ren Wan-Chun (任万春)c, Tong Hao (童浩)c   

  1. a State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
    b University of the Chinese Academy of Sciences, Beijing 100049, China;
    c Semiconductor Manufacturing International Corporation, Shanghai 201203, China
  • Received:2013-09-04 Revised:2014-03-21 Online:2014-08-15 Published:2014-08-15
  • Contact: Liu Bo E-mail:liubo@mail.sim.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00607, and 2011CB9328004), the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003), the National Natural Science Foundation of China (Grant Nos. 60906004, 60906003, 61006087, 61076121, 61176122, and 61106001), and the Funds from the Science and Technology Council of Shanghai, China (Grant No. 12nm0503701).

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摘要： In the fabrication of phase change random access memory (PRAM) devices, high temperature thermal processes are inevitable. We investigate the thermal stability of Ge2Sb2Te5 (GST) which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of Ge2Sb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric (IMD) deposition process can ease the thermal impact of line-GST PRAM cell.

关键词: phase change memory, Ge2Sb2Te5, thermal effect, failure analysis

Abstract: In the fabrication of phase change random access memory (PRAM) devices, high temperature thermal processes are inevitable. We investigate the thermal stability of Ge2Sb2Te5 (GST) which is a prototypical phase change material. After high temperature process, voids of phase change material exist at the interface between Ge2Sb2Te5 and substrate in the initial open memory cell. This lower region of Ge2Sb2Te5 is found to be a Te-rich phase change layer. Phase change memory devices are fabricated in different process conditions and examined by scanning electron microscopy and energy dispersive X-ray. It is found that hot-chuck process, nitrogen-doping process, and lower temperature inter-metal dielectric (IMD) deposition process can ease the thermal impact of line-GST PRAM cell.

Key words: phase change memory, Ge2Sb2Te5, thermal effect, failure analysis

中图分类号:  (Amorphous semiconductors; glasses)

  • 78.66.Jg
68.35.Np (Adhesion) 68.35.Ct (Interface structure and roughness) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)