Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

doi:10.1088/1674-1056/23/7/079401

›› 2014, Vol. 23 ›› Issue (7): 79401-079401.doi: 10.1088/1674-1056/23/7/079401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

何益百^a, 陈书明^{a b}

a College of Computer, National University of Defense Technology, Changsha 410073, China;
b Science and Technology on Parallel and Distributed Processing Laboratory, National University of Defense Technology, Changsha 410073, China

收稿日期:2013-11-26 修回日期:2014-01-10 出版日期:2014-07-15 发布日期:2014-07-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61376109).

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

He Yi-Bai (何益百)^a, Chen Shu-Ming (陈书明)^{a b}

a College of Computer, National University of Defense Technology, Changsha 410073, China;
b Science and Technology on Parallel and Distributed Processing Laboratory, National University of Defense Technology, Changsha 410073, China

Received:2013-11-26 Revised:2014-01-10 Online:2014-07-15 Published:2014-07-15
Contact: Chen Shu-Ming E-mail:smchen_cs@163.com
About author:94.05.Dd; 94.05.Rx; 85.30.Tv; 02.60.Cb
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61376109).

摘要/Abstract

摘要： The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.

关键词: single event effect, single event transient, parasitic bipolar amplification, heavy ion experiments

Abstract: The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.

Key words: single event effect, single event transient, parasitic bipolar amplification, heavy ion experiments

中图分类号: (Radiation processes)

94.05.Dd

94.05.Rx (Experimental techniques and laboratory studies) 85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

何益百, 陈书明. Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients[J]. , 2014, 23(7): 79401-079401.

He Yi-Bai (何益百), Chen Shu-Ming (陈书明). Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients[J]. Chin. Phys. B, 2014, 23(7): 79401-079401.

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Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

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