›› 2014, Vol. 23 ›› Issue (7): 77104-077104.doi: 10.1088/1674-1056/23/7/077104

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaNxAsyP1-x-y/GaP quantum wells on GaP substrates

Ö L Ünsal, B Gönül, M Temiz   

  1. Department of Engineering Physics, University of Gaziantep, 27310 Gaziantep, Turkey
  • 收稿日期:2013-12-24 修回日期:2014-01-14 出版日期:2014-07-15 发布日期:2014-07-15

A theoretical investigation of the band alignment of type-I direct band gap dilute nitride phosphide alloy of GaNxAsyP1-x-y/GaP quantum wells on GaP substrates

Ö L Ünsal, B Gönül, M Temiz   

  1. Department of Engineering Physics, University of Gaziantep, 27310 Gaziantep, Turkey
  • Received:2013-12-24 Revised:2014-01-14 Online:2014-07-15 Published:2014-07-15
  • Contact: Ö L Ünsal E-mail:omerlutfiunsal@gmail.com
  • About author:71.20.-b; 71.55.Eq; 73.21.Fg

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摘要： The GaP-based dilute nitride direct band gap material Ga(NAsP) is gaining importance due to the monolithic integration of laser diodes on Si microprocessors. The major advantage of this newly proposed laser material system is the small lattice mismatch between GaP and Si. However, the large threshold current density of these promising laser diodes on Si substrates shows that the carrier leakage plays an important role in Ga(NAsP)/GaP QW lasers. Therefore, it is necessary to investigate the band alignment in this laser material system. In this paper, we present a theoretical investigation to optimize the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs on GaP substrates. We examine the effect of nitrogen (N) concentration on the band offset ratios and band offset energies. We also provide a comparison of the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs with that of the GaNxAsyP1-x-y/AlzGa1-zP QWs on GaP substrates. Our theoretical calculations indicate that the incorporations of N into the well and Al into the barrier improve the band alignment compared to that of the GaAsP/GaP QW laser heterostructures.

关键词: quantum well, band alignment, carrier confinement, dilute nitride phosphide alloy

Abstract: The GaP-based dilute nitride direct band gap material Ga(NAsP) is gaining importance due to the monolithic integration of laser diodes on Si microprocessors. The major advantage of this newly proposed laser material system is the small lattice mismatch between GaP and Si. However, the large threshold current density of these promising laser diodes on Si substrates shows that the carrier leakage plays an important role in Ga(NAsP)/GaP QW lasers. Therefore, it is necessary to investigate the band alignment in this laser material system. In this paper, we present a theoretical investigation to optimize the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs on GaP substrates. We examine the effect of nitrogen (N) concentration on the band offset ratios and band offset energies. We also provide a comparison of the band alignment of type-I direct band gap GaNxAsyP1-x-y/GaP QWs with that of the GaNxAsyP1-x-y/AlzGa1-zP QWs on GaP substrates. Our theoretical calculations indicate that the incorporations of N into the well and Al into the barrier improve the band alignment compared to that of the GaAsP/GaP QW laser heterostructures.

Key words: quantum well, band alignment, carrier confinement, dilute nitride phosphide alloy

中图分类号:  (Electron density of states and band structure of crystalline solids)

  • 71.20.-b
71.55.Eq (III-V semiconductors) 73.21.Fg (Quantum wells)