Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC

doi:10.1088/1674-1056/23/6/066803

中国物理B ›› 2014, Vol. 23 ›› Issue (6): 66803-066803.doi: 10.1088/1674-1056/23/6/066803

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC

代冲冲^{a b}, 刘学超^a, 周天宇^{a b}, 卓世异^a, 石彪^c, 施尔畏^a

a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China;
c Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 401122, China

收稿日期:2013-11-01 修回日期:2013-12-01 出版日期:2014-06-15 发布日期:2014-06-15
基金资助:
Project supported by the Shanghai Rising-Star Program, China (Grant No. 13QA1403800), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High Technology Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC

Dai Chong-Chong (代冲冲)^{a b}, Liu Xue-Chao (刘学超)^a, Zhou Tian-Yu (周天宇)^{a b}, Zhuo Shi-Yi (卓世异)^a, Shi Biao (石彪)^c, Shi Er-Wei (施尔畏)^a

a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b University of the Chinese Academy of Sciences, Beijing 100049, China;
c Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 401122, China

Received:2013-11-01 Revised:2013-12-01 Online:2014-06-15 Published:2014-06-15
Contact: Liu Xue-Chao E-mail:xcliu@mail.sic.ac.cn
Supported by:
Project supported by the Shanghai Rising-Star Program, China (Grant No. 13QA1403800), the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176), the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High Technology Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

摘要/Abstract

摘要： The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. Al contacts with different thickness values are deposited on the 3C-SiC/Si (100) structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and microstructure of Al/3C-SiC structure. The electrical properties of Al contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of Al contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the Al contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing temperature is above 650 ℃. A minimum specific contact resistance of 1.8 ×10^-4 Ω·cm² is obtained when the Al contact is annealed at 250 ℃.

关键词: Al/3C-SiC, ohmic contact, specific contact resistance

Abstract: The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. Al contacts with different thickness values are deposited on the 3C-SiC/Si (100) structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and microstructure of Al/3C-SiC structure. The electrical properties of Al contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of Al contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the Al contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing temperature is above 650 ℃. A minimum specific contact resistance of 1.8 ×10^-4 Ω·cm² is obtained when the Al contact is annealed at 250 ℃.

Key words: Al/3C-SiC, ohmic contact, specific contact resistance

中图分类号: (Semiconductor surfaces)

68.47.Fg

73.40.Ns (Metal-nonmetal contacts)

代冲冲, 刘学超, 周天宇, 卓世异, 石彪, 施尔畏. Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC[J]. 中国物理B, 2014, 23(6): 66803-066803.

Dai Chong-Chong (代冲冲), Liu Xue-Chao (刘学超), Zhou Tian-Yu (周天宇), Zhuo Shi-Yi (卓世异), Shi Biao (石彪), Shi Er-Wei (施尔畏). Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC[J]. Chin. Phys. B, 2014, 23(6): 66803-066803.

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Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC

Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC

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