中国物理B ›› 2014, Vol. 23 ›› Issue (6): 65201-065201.doi: 10.1088/1674-1056/23/6/065201

• PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES • 上一篇    下一篇

Characteristics of dual-frequency capacitively coupled SF6/O2 plasma and plasma texturing of multi-crystalline silicon

徐东升a, 邹帅a b, 辛煜a, 苏晓东a, 王栩生b   

  1. a Provincial Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;
    b Canadian Solar Inc. China, Suzhou 215000, China
  • 收稿日期:2013-11-12 修回日期:2013-12-09 出版日期:2014-06-15 发布日期:2014-06-15
  • 基金资助:
    Project supported by the Prospective Project of Industry-University-Research Institution of Jiangsu Province, China (Grant No. BY2010125) and the National Natural Science Foundation of China (Grant No. 11175127).

Characteristics of dual-frequency capacitively coupled SF6/O2 plasma and plasma texturing of multi-crystalline silicon

Xu Dong-Sheng (徐东升)a, Zou Shuai (邹帅)a b, Xin Yu (辛煜)a, Su Xiao-Dong (苏晓东)a, Wang Xu-Sheng (王栩生)b   

  1. a Provincial Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China;
    b Canadian Solar Inc. China, Suzhou 215000, China
  • Received:2013-11-12 Revised:2013-12-09 Online:2014-06-15 Published:2014-06-15
  • Contact: Xin Yu E-mail:xylzf_1999@suda.edu.cn
  • Supported by:
    Project supported by the Prospective Project of Industry-University-Research Institution of Jiangsu Province, China (Grant No. BY2010125) and the National Natural Science Foundation of China (Grant No. 11175127).

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摘要： Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon (mc-Si) surface texturing. In this paper, capacitively coupled plasma (CCP) driven by a dual frequency (DF) of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2 gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency (RF) input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density ne must be larger than 6.3×109 cm-3 and the spectral intensity ratio of the F atom to that of the O atom ([F]/[O]) in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9×109 cm-3.

关键词: dual frequency capacitively coupled plasma, plasma texturing, multi-crystalline silicon, electron density

Abstract: Due to it being environmentally friendly, much attention has been paid to the dry plasma texturing technique serving as an alternative candidate for multicrystalline silicon (mc-Si) surface texturing. In this paper, capacitively coupled plasma (CCP) driven by a dual frequency (DF) of 40.68 MHz and 13.56 MHz is first used for plasma texturing of mc-Si with SF6/O2 gas mixture. Using a hairpin resonant probe and optical emission techniques, DF-CCP characteristics and their influence on mc-silicon surface plasma texturing are investigated at different flow rate ratios, pressures, and radio-frequency (RF) input powers. Experimental results show that suitable plasma texturing of mc-silicon occurs only in a narrow range of plasma parameters, where electron density ne must be larger than 6.3×109 cm-3 and the spectral intensity ratio of the F atom to that of the O atom ([F]/[O]) in the plasma must be between 0.8 and 0.3. Out of this range, no cone-like structure is formed on the mc-silicon surface. In our experiments, the lowest reflectance of about 7.3% for mc-silicon surface texturing is obtained at an [F]/[O] of 0.5 and ne of 6.9×109 cm-3.

Key words: dual frequency capacitively coupled plasma, plasma texturing, multi-crystalline silicon, electron density

中图分类号:  (Multicomponent and negative-ion plasmas)

  • 52.27.Cm
52.70.Ds (Electric and magnetic measurements) 52.70.Nc (Particle measurements)