GaN hexagonal pyramids formed by a photo-assisted chemical etching method

doi:10.1088/1674-1056/23/5/058101

中国物理B ›› 2014, Vol. 23 ›› Issue (5): 58101-058101.doi: 10.1088/1674-1056/23/5/058101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

张士英^{a b}, 修向前^a, 华雪梅^a, 谢自力^a, 刘斌^a, 陈鹏^a, 韩平^a, 陆海^a, 张荣^a, 郑有炓^a

a Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China;
b College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, China

收稿日期:2013-08-04 修回日期:2013-11-03 出版日期:2014-05-15 发布日期:2014-05-15
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900, 2012CB619304, and 2010CB327504), the National High Technology Research and Development Program of China (Grant No. 2011AA03A103), the National Nature Science Foundation of China (Grant Nos. 60990311, 60906025, 60936004, and 61176063), and the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010 and BK2009255).

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

Zhang Shi-Ying (张士英)^{a b}, Xiu Xiang-Qian (修向前)^a, Hua Xue-Mei (华雪梅)^a, Xie Zi-Li (谢自力)^a, Liu Bin (刘斌)^a, Chen Peng (陈鹏)^a, Han Ping (韩平)^a, Lu Hai (陆海)^a, Zhang Rong (张荣)^a, Zheng You-Dou (郑有炓)^a

a Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China;
b College of Optoelectronics Engineering, Zaozhuang University, Zaozhuang 277160, China

Received:2013-08-04 Revised:2013-11-03 Online:2014-05-15 Published:2014-05-15
Contact: Xiu Xiang-Qian, Zhang Rong E-mail:xqxiu@nju.edu.cn;rzhang@nju.edu.cn
About author:81.05.Ea; 68.65.-k; 81.65.Cf; 78.55.-m
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900, 2012CB619304, and 2010CB327504), the National High Technology Research and Development Program of China (Grant No. 2011AA03A103), the National Nature Science Foundation of China (Grant Nos. 60990311, 60906025, 60936004, and 61176063), and the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2011010 and BK2009255).

摘要/Abstract

摘要： A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a convenient photo-assisted chemical (PAC) etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed analysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.

关键词: hexagonal pyramids, GaN, photo-assisted chemical etching

Abstract: A series of experiments were conducted to systematically study the effects of etching conditions on GaN by a convenient photo-assisted chemical (PAC) etching method. The solution concentration has an evident influence on the surface morphology of GaN and the optimal solution concentrations for GaN hexagonal pyramids have been identified. GaN with hexagonal pyramids have higher crystal quality and tensile strain relaxation compared with as-grown GaN. A detailed analysis about evolution of the size, density and optical property of GaN hexagonal pyramids is described as a function of light intensity. The intensity of photoluminescence spectra of GaN etched with hexagonal pyramids significantly increases compared to that of as-grown GaN due to multiple scattering events, high quality GaN with pyramids and the Bragg effect.

Key words: hexagonal pyramids, GaN, photo-assisted chemical etching

中图分类号: (III-V semiconductors)

81.05.Ea

68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties) 81.65.Cf (Surface cleaning, etching, patterning) 78.55.-m (Photoluminescence, properties and materials)

张士英, 修向前, 华雪梅, 谢自力, 刘斌, 陈鹏, 韩平, 陆海, 张荣, 郑有炓. GaN hexagonal pyramids formed by a photo-assisted chemical etching method[J]. 中国物理B, 2014, 23(5): 58101-058101.

Zhang Shi-Ying (张士英), Xiu Xiang-Qian (修向前), Hua Xue-Mei (华雪梅), Xie Zi-Li (谢自力), Liu Bin (刘斌), Chen Peng (陈鹏), Han Ping (韩平), Lu Hai (陆海), Zhang Rong (张荣), Zheng You-Dou (郑有炓). GaN hexagonal pyramids formed by a photo-assisted chemical etching method[J]. Chin. Phys. B, 2014, 23(5): 58101-058101.

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GaN hexagonal pyramids formed by a photo-assisted chemical etching method

GaN hexagonal pyramids formed by a photo-assisted chemical etching method

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