Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

doi:10.1088/1674-1056/23/5/057305

中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57305-057305.doi: 10.1088/1674-1056/23/5/057305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

雷晓艺^a, 刘红侠^a, 张月^a, 马晓华^{a b}, 郝跃^a

a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Technical Physics, Xidian University, Xi'an 710071, China

收稿日期:2013-10-25 修回日期:2013-11-22 出版日期:2014-05-15 发布日期:2014-05-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106).

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

Lei Xiao-Yi (雷晓艺)^a, Liu Hong-Xia (刘红侠)^a, Zhang Yue (张月)^a, Ma Xiao-Hua (马晓华)^{a b}, Hao Yue (郝跃)^a

a Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Technical Physics, Xidian University, Xi'an 710071, China

Received:2013-10-25 Revised:2013-11-22 Online:2014-05-15 Published:2014-05-15
Contact: Lei Xiao-Yi E-mail:lydialeixy@163.com
About author:73.40.Qv; 85.30.Tv
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106).

摘要/Abstract

摘要： The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET.

关键词: n-channel metal oxide semiconductor field effect transistor, hot carrier, degradation, lifetime model

Abstract: The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET.

Key words: n-channel metal oxide semiconductor field effect transistor, hot carrier, degradation, lifetime model

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.Tv (Field effect devices)

雷晓艺, 刘红侠, 张月, 马晓华, 郝跃. Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET[J]. 中国物理B, 2014, 23(5): 57305-057305.

Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Zhang Yue (张月), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET[J]. Chin. Phys. B, 2014, 23(5): 57305-057305.

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Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

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