中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57304-057304.doi: 10.1088/1674-1056/23/5/057304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

张月a b, 卓青青a b, 刘红侠a b, 马晓华b c, 郝跃b   

  1. a School of Microelectronics, Xidian University, Xi'an 710071, China;
    b State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China;
    c School of Technical Physics, Xidian University, Xi'an 710071, China
  • 收稿日期:2013-08-20 修回日期:2013-11-26 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106).

Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

Zhang Yue (张月)a b, Zhuo Qing-Qing (卓青青)a b, Liu Hong-Xia (刘红侠)a b, Ma Xiao-Hua (马晓华)b c, Hao Yue (郝跃)b   

  1. a School of Microelectronics, Xidian University, Xi'an 710071, China;
    b State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xi'an 710071, China;
    c School of Technical Physics, Xidian University, Xi'an 710071, China
  • Received:2013-08-20 Revised:2013-11-26 Online:2014-05-15 Published:2014-05-15
  • Contact: Zhang Yue E-mail:zhangy@mail.xidian.edu.cn
  • About author:73.40.Qv; 85.30.De
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606) and the National Natural Science Foundation of China (Grant No. 61106106).

摘要: The effect of the static negative bias temperature (NBT) stress on a p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability (NBTI) degradation has the trend predicted by the reaction-diffusion (R-D) model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.

关键词: negative bias temperature instability (NBTI), reaction-diffusion model, interface traps, power MOSFET

Abstract: The effect of the static negative bias temperature (NBT) stress on a p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability (NBTI) degradation has the trend predicted by the reaction-diffusion (R-D) model but with an exaggerated time scale. The phenomena of the flat-roof section are observed under various stress conditions, which can be considered as the dynamic equilibrium phase in the R-D process. Based on the simulated results, the variation of the flat-roof section with the stress condition can be explained.

Key words: negative bias temperature instability (NBTI), reaction-diffusion model, interface traps, power MOSFET

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
85.30.De (Semiconductor-device characterization, design, and modeling)