中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57202-057202.doi: 10.1088/1674-1056/23/5/057202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of charge order transition on tunneling resistance in Pr0.6Ca0.4MnO3/Nb-doped SrTiO3 heterojunction

王登京, 马俊杰, 王妹, 汪汝武, 李云宝   

  1. Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China
  • 收稿日期:2013-10-17 修回日期:2013-11-29 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

Effect of charge order transition on tunneling resistance in Pr0.6Ca0.4MnO3/Nb-doped SrTiO3 heterojunction

Wang Deng-Jing (王登京), Ma Jun-Jie (马俊杰), Wang Mei (王妹), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝)   

  1. Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China
  • Received:2013-10-17 Revised:2013-11-29 Online:2014-05-15 Published:2014-05-15
  • Contact: Wang Deng-Jing E-mail:d.j.wang@163.com
  • About author:72.20.-i; 73.40.Lq; 73.40.Gk; 73.40.Ei
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

摘要: An oxide p-n heterojunction composed of Pr0.6Ca0.4MnO3 film, with a charge order (CO) transition, and 1wt% Nb-doped SrTiO3 substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference.

关键词: manganite, heterojunction, tunneling, charge order transition

Abstract: An oxide p-n heterojunction composed of Pr0.6Ca0.4MnO3 film, with a charge order (CO) transition, and 1wt% Nb-doped SrTiO3 substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference.

Key words: manganite, heterojunction, tunneling, charge order transition

中图分类号:  (Conductivity phenomena in semiconductors and insulators)

  • 72.20.-i
73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.40.Gk (Tunneling) 73.40.Ei (Rectification)