中国物理B ›› 2014, Vol. 23 ›› Issue (5): 54211-054211.doi: 10.1088/1674-1056/23/5/054211

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

梁明明a b, 翁国恩a b, 张江勇c, 蔡晓梅a b, 吕雪芹b, 应磊莹c, 张保平a c   

  1. a Department of Physics, Xiamen University, Xiamen 361005, China;
    b Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China;
    c Department of Electronic Engineering, Xiamen University, Xiamen 361005, China
  • 收稿日期:2013-08-12 修回日期:2013-10-16 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61106044 and 61274052), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110121110029), the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2013121024), and the Natural Science Foundation of Fujian Province of China (Grant No. 2013J05096).

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

Liang Ming-Ming (梁明明)a b, Weng Guo-En (翁国恩)a b, Zhang Jiang-Yong (张江勇)c, Cai Xiao-Mei (蔡晓梅)a b, Lü Xue-Qin (吕雪芹)b, Ying Lei-Ying (应磊莹)c, Zhang Bao-Ping (张保平)a c   

  1. a Department of Physics, Xiamen University, Xiamen 361005, China;
    b Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China;
    c Department of Electronic Engineering, Xiamen University, Xiamen 361005, China
  • Received:2013-08-12 Revised:2013-10-16 Online:2014-05-15 Published:2014-05-15
  • Contact: Zhang Jiang-Yong, Zhang Bao-Ping E-mail:jyzhang2010@xmu.edu.cn;bzhang@xmu.edu.cn
  • About author:42.70.-a; 78.20.-e; 78.40.Pg; 78.66.Fd
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61106044 and 61274052), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110121110029), the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2013121024), and the Natural Science Foundation of Fujian Province of China (Grant No. 2013J05096).

PDF (PC)

610

赞

摘要： The structural and optical properties of InGaN/GaN multiple quantum wells (MQWs) with different barrier thicknesses are studied by means of high resolution X-ray diffraction (HRXRD), a cross-sectional transmission electron microscope (TEM), and temperature-dependent photoluminescence (PL) measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodicity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization potentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence, and the corresponding activation energy (or the localization potential) increases with the increase of the barrier thickness. The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers, i.e., clusters with lower In contents aggregate into clusters with higher In contents.

关键词: InGaN/GaN multiple quantum wells, barrier thickness, thermal quenching, localization potential

Abstract: The structural and optical properties of InGaN/GaN multiple quantum wells (MQWs) with different barrier thicknesses are studied by means of high resolution X-ray diffraction (HRXRD), a cross-sectional transmission electron microscope (TEM), and temperature-dependent photoluminescence (PL) measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodicity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization potentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence, and the corresponding activation energy (or the localization potential) increases with the increase of the barrier thickness. The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers, i.e., clusters with lower In contents aggregate into clusters with higher In contents.

Key words: InGaN/GaN multiple quantum wells, barrier thickness, thermal quenching, localization potential

中图分类号:  (Optical materials)

  • 42.70.-a
78.20.-e (Optical properties of bulk materials and thin films) 78.40.Pg (Disordered solids) 78.66.Fd (III-V semiconductors)