Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method

doi:10.1088/1674-1056/23/4/047805

中国物理B ›› 2014, Vol. 23 ›› Issue (4): 47805-047805.doi: 10.1088/1674-1056/23/4/047805

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method

曹萌萌, 赵小如, 段利兵, 刘金茹, 关蒙萌, 郭文瑞

Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education of China and Department of Applied Physics, Northwestern Polytechnical University, Xi'an 710072, China

收稿日期:2013-08-09 修回日期:2013-10-23 出版日期:2014-04-15 发布日期:2014-04-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51172186), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20106102120051), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2013JQ6019).

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method

Cao Meng-Meng (曹萌萌), Zhao Xiao-Ru (赵小如), Duan Li-Bing (段利兵), Liu Jin-Ru (刘金茹), Guan Meng-Meng (关蒙萌), Guo Wen-Rui (郭文瑞)

Key Laboratory of Space Applied Physics and Chemistry, Ministry of Education of China and Department of Applied Physics, Northwestern Polytechnical University, Xi'an 710072, China

Received:2013-08-09 Revised:2013-10-23 Online:2014-04-15 Published:2014-04-15
Contact: Zhao Xiao-Ru E-mail:xrzhao@nwpu.edu.cn
About author:78.66.-w; 73.61.-r; 96.60.th
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51172186), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20106102120051), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2013JQ6019).

摘要/Abstract

摘要： Sb-doped ZnO thin films with different values of Sb content (from 0 to 1.1 at.%) are deposited by the sol-gel dip-coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy (UV-VIS) spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance (> 90%) in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence (PL) spectra revealed that the defect emission (around 450 nm) is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.

关键词: Sb-doped ZnO thin films, electrical and optical properties, sol concentrations, annealing ambient

Abstract: Sb-doped ZnO thin films with different values of Sb content (from 0 to 1.1 at.%) are deposited by the sol-gel dip-coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy (UV-VIS) spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance (> 90%) in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence (PL) spectra revealed that the defect emission (around 450 nm) is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.

Key words: Sb-doped ZnO thin films, electrical and optical properties, sol concentrations, annealing ambient

中图分类号: (Optical properties of specific thin films)

78.66.-w

73.61.-r (Electrical properties of specific thin films) 96.60.th (Visible emission)

曹萌萌, 赵小如, 段利兵, 刘金茹, 关蒙萌, 郭文瑞. Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method[J]. 中国物理B, 2014, 23(4): 47805-047805.

Cao Meng-Meng (曹萌萌), Zhao Xiao-Ru (赵小如), Duan Li-Bing (段利兵), Liu Jin-Ru (刘金茹), Guan Meng-Meng (关蒙萌), Guo Wen-Rui (郭文瑞). Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method[J]. Chin. Phys. B, 2014, 23(4): 47805-047805.

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Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol-gel method

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