中国物理B ›› 2014, Vol. 23 ›› Issue (4): 46106-046106.doi: 10.1088/1674-1056/23/4/046106

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods

贾志楠a b, 张晓丹a, 刘阳a, 王延峰a, 樊君a c, 刘彩池b, 赵颖a   

  1. a Institute of Photo-Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technology of Tianjin, Tianjin 300071, China;
    b School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China;
    c School of Information and Engineering, Hebei University of Technology, Tianjin 300130, China
  • 收稿日期:2013-07-14 修回日期:2013-10-09 出版日期:2014-04-15 发布日期:2014-04-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00706 and 2011CBA00707), the High-Technology Research and Development Program of China (Grant No. 2013AA050302), the Science and Technology Support Program of Tianjin City, China (Grant No. 12ZCZDGX03600), the Major Science and Technology SupportProject of Tianjin City, China (Grant No. 11TXSYGX22100), and the Specialized Research Fund for the Ph. D. Program of Higher Education, China (Grant No. 20120031110039).

Improving light trapping and conversion efficiency of amorphous silicon solar cell by modified and randomly distributed ZnO nanorods

Jia Zhi-Nan (贾志楠)a b, Zhang Xiao-Dan (张晓丹)a, Liu Yang (刘阳)a, Wang Yan-Feng (王延峰)a, Fan Jun (樊君)a c, Liu Cai-Chi (刘彩池)b, Zhao Ying (赵颖)a   

  1. a Institute of Photo-Electronics Thin Film Devices and Technology of Nankai University, Key Laboratory of Photo-Electronics Thin Film Devices and Technology of Tianjin, Tianjin 300071, China;
    b School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China;
    c School of Information and Engineering, Hebei University of Technology, Tianjin 300130, China
  • Received:2013-07-14 Revised:2013-10-09 Online:2014-04-15 Published:2014-04-15
  • Contact: Zhang Xiao-Dan E-mail:xdzhang@nankai.edu.cn
  • About author:61.46.Km; 78.35.+c; 77.55.hf; 88.40.H-
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00706 and 2011CBA00707), the High-Technology Research and Development Program of China (Grant No. 2013AA050302), the Science and Technology Support Program of Tianjin City, China (Grant No. 12ZCZDGX03600), the Major Science and Technology SupportProject of Tianjin City, China (Grant No. 11TXSYGX22100), and the Specialized Research Fund for the Ph. D. Program of Higher Education, China (Grant No. 20120031110039).

PDF (PC)

894

赞

摘要： Three-dimensional (3D) nanostructures in thin film solar cells have attracted significant attention due to their applications in enhancing light trapping. Enhanced light trapping can result in more effective absorption in solar cells, thus leading to higher short-circuit current density and conversion efficiency. We develop randomly distributed and modified ZnO nanorods, which are designed and fabricated by the following processes: the deposition of a ZnO seed layer on substrate with sputtering, the wet chemical etching of the seed layer to form isolated islands for nanorod growth, the chemical bath deposition of the ZnO nanorods, and the sputtering deposition of a thin Al-doped ZnO (ZnO:Al) layer to improve the ZnO/Si interface. Solar cells employing the modified ZnO nanorod substrate show a considerable increase in solar energy conversion efficiency.

关键词: random ZnO nanorod, light trapping Al-doped ZnO, solar cells

Abstract: Three-dimensional (3D) nanostructures in thin film solar cells have attracted significant attention due to their applications in enhancing light trapping. Enhanced light trapping can result in more effective absorption in solar cells, thus leading to higher short-circuit current density and conversion efficiency. We develop randomly distributed and modified ZnO nanorods, which are designed and fabricated by the following processes: the deposition of a ZnO seed layer on substrate with sputtering, the wet chemical etching of the seed layer to form isolated islands for nanorod growth, the chemical bath deposition of the ZnO nanorods, and the sputtering deposition of a thin Al-doped ZnO (ZnO:Al) layer to improve the ZnO/Si interface. Solar cells employing the modified ZnO nanorod substrate show a considerable increase in solar energy conversion efficiency.

Key words: random ZnO nanorod, light trapping Al-doped ZnO, solar cells

中图分类号:  (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

  • 61.46.Km
78.35.+c (Brillouin and Rayleigh scattering; other light scattering) 77.55.hf (ZnO) 88.40.H- (Solar cells (photovoltaics))