Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

doi:10.1088/1674-1056/23/3/038404

中国物理B ›› 2014, Vol. 23 ›› Issue (3): 38404-038404.doi: 10.1088/1674-1056/23/3/038404

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

黄达^{a b}, 吴俊杰^b, 唐玉华^b

a State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China;
b School of Computer, National University of Defense Technology, Changsha 410073, China

收稿日期:2013-06-21 修回日期:2013-08-14 出版日期:2014-03-15 发布日期:2014-03-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60921062).

Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

Huang Da (黄达)^{a b}, Wu Jun-Jie (吴俊杰)^b, Tang Yu-Hua (唐玉华)^b

a State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China;
b School of Computer, National University of Defense Technology, Changsha 410073, China

Received:2013-06-21 Revised:2013-08-14 Online:2014-03-15 Published:2014-03-15
Contact: Huang Da E-mail:huangda1109@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60921062).

摘要/Abstract

摘要： With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.

关键词: resistive RAM, fault tolerance, resistive switching mechanism, circuit model

Abstract: With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.

Key words: resistive RAM, fault tolerance, resistive switching mechanism, circuit model

中图分类号: (Passive circuit components)

84.32.-y

89.20.Ff (Computer science and technology) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

黄达, 吴俊杰, 唐玉华. Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor[J]. 中国物理B, 2014, 23(3): 38404-038404.

Huang Da (黄达), Wu Jun-Jie (吴俊杰), Tang Yu-Hua (唐玉华). Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor[J]. Chin. Phys. B, 2014, 23(3): 38404-038404.

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Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

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