中国物理B ›› 2014, Vol. 23 ›› Issue (2): 28802-028802.doi: 10.1088/1674-1056/23/2/028802

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Hybrid solar cell based on polythiophene and GaN nanoparticles composite

冯倩a b, 时鹏a b, 李宇坤a b, 杜锴a b, 王强a b, 冯庆a b, 郝跃a b   

  1. a School of Microelectronics, Xidian University, Xi’an 710071, China;
    b Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an 710071, China
  • 收稿日期:2013-04-23 修回日期:2013-07-18 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the Basic Science Research Fund for the Central Universities, China (Grant No. K50511250009).

Hybrid solar cell based on polythiophene and GaN nanoparticles composite

Feng Qian (冯倩)a b, Shi Peng (时鹏)a b, Li Yu-Kun (李宇坤)a b, Du Kai (杜锴)a b, Wang Qiang (王强)a b, Feng Qing (冯庆)a b, Hao Yue (郝跃)a b   

  1. a School of Microelectronics, Xidian University, Xi’an 710071, China;
    b Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi’an 710071, China
  • Received:2013-04-23 Revised:2013-07-18 Online:2013-12-12 Published:2013-12-12
  • Contact: Feng Qian E-mail:qfeng@mail.xidian.edu.cn
  • About author:88.40.H-; 73.63.Bd; 81.07.Pr
  • Supported by:
    Project supported by the Basic Science Research Fund for the Central Universities, China (Grant No. K50511250009).

摘要: Hybrid solar cells based on poly(3-hexylthiophene) (P3HT) and Galium nitride (GaN) nanoparticle bulk heterojunction are fabricated and analyzed. The GaN nanocrystal is synthesized by means of a combination of sol–gel process with high temperature ammoniation using Ga(OC2H5) as a precursor. Their characteristics are determined by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. With the addition of GaN nanoparticle to P3HT, the device performance is greatly enhanced.

关键词: gallium nitride nanocrystal, hybrid solar cell, P3HT

Abstract: Hybrid solar cells based on poly(3-hexylthiophene) (P3HT) and Galium nitride (GaN) nanoparticle bulk heterojunction are fabricated and analyzed. The GaN nanocrystal is synthesized by means of a combination of sol–gel process with high temperature ammoniation using Ga(OC2H5) as a precursor. Their characteristics are determined by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. With the addition of GaN nanoparticle to P3HT, the device performance is greatly enhanced.

Key words: gallium nitride nanocrystal, hybrid solar cell, P3HT

中图分类号:  (Solar cells (photovoltaics))

  • 88.40.H-
73.63.Bd (Nanocrystalline materials) 81.07.Pr (Organic-inorganic hybrid nanostructures)