中国物理B ›› 2014, Vol. 23 ›› Issue (2): 28504-028504.doi: 10.1088/1674-1056/23/2/028504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

吴奎a b, 魏同波a, 蓝鼎c, 郑海洋a, 王军喜a, 罗毅b, 李晋闽a   

  1. a Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China;
    c National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
  • 收稿日期:2013-08-29 修回日期:2013-09-22 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB301902).

Large-scale SiO2 photonic crystal for high efficiency GaN LEDs by nanospherical-lens lithography

Wu Kui (吴奎)a b, Wei Tong-Bo (魏同波)a, Lan Ding (蓝鼎)c, Zheng Hai-Yang (郑海洋)a, Wang Jun-Xi (王军喜)a, Luo Yi (罗毅)b, Li Jin-Min (李晋闽)a   

  1. a Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    b Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Tsinghua University, Beijing 100084, China;
    c National Microgravity Laboratory, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China
  • Received:2013-08-29 Revised:2013-09-22 Online:2013-12-12 Published:2013-12-12
  • Contact: Wei Tong-Bo E-mail:tbwei@semi.ac.cn
  • About author:85.60.Jb; 42.70.Qs; 81.16.Nd; 83.10.Rs
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB301902).

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摘要： Wafer-scale SiO2 photonic crystal (PhC) patterns (SiO2 air-hole PhC, SiO2-pillar PhC) on indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2-pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.

关键词: InGaN light-emitting diodes (LEDs), photonic crystal, nanosphere lithography, FDTD simulation

Abstract: Wafer-scale SiO2 photonic crystal (PhC) patterns (SiO2 air-hole PhC, SiO2-pillar PhC) on indium tin oxide (ITO) layer of GaN-based light-emitting diode (LED) are fabricated via novel nanospherical-lens lithography. Nanoscale polystyrene spheres are self-assembled into a hexagonal closed-packed monolayer array acting as convex lens for exposure using conventional lithography instrument. The light output power is enhanced by as great as 40.5% and 61% over those of as-grown LEDs, for SiO2-hole PhC and SiO2-pillar PhC LEDs, respectively. No degradation to LED electrical properties is found due to the fact that SiO2 PhC structures are fabricated on ITO current spreading electrode. For SiO2-pillar PhC LEDs, which have the largest light output power in all LEDs, no dry etching, which would introduce etching damage, was involved. Our method is demonstrated to be a simple, low cost, and high-yield technique for fabricating the PhC LEDs. Furthermore, the finite difference time domain simulation is also performed to further reveal the emission characteristics of LEDs with PhC structures.

Key words: InGaN light-emitting diodes (LEDs), photonic crystal, nanosphere lithography, FDTD simulation

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
42.70.Qs (Photonic bandgap materials) 81.16.Nd (Micro- and nanolithography) 83.10.Rs (Computer simulation of molecular and particle dynamics)