中国物理B ›› 2014, Vol. 23 ›› Issue (2): 27202-027202.doi: 10.1088/1674-1056/23/2/027202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage

张玉萍, 尹贻恒, 吕欢欢, 张会云   

  1. Qingdao Key Laboratory of Terahertz Technology, College of Science, Shandong University of Science and Technology, Qingdao 266510, China
  • 收稿日期:2013-08-09 修回日期:2013-10-29 出版日期:2013-12-12 发布日期:2013-12-12
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61001018), the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2011FM009 and ZR2012FM011), the Research Fund of Shandong University of Science and Technology, China (Grant Nos. 2010KYJQ103 and 2012KYTD103), the Project of Shandong Province Higher Educational Science and Technology Program, China (Grant No. J11LG20), the Qingdao Municipal Science & Technology Project, China (Grant No. 11-2-4-4-(8)-jch), the Qingdao Municipal Economic and Technical Development Zone Science and Technology Project, China (Grant No. 2013-1-64), and the Shandong University of Science and Technology Foundation, China (Grant No. YC130220).

Electronic band gap and transport in graphene superlattice with a Gaussian profile potential voltage

Zhang Yu-Ping (张玉萍), Yin Yi-Heng (尹贻恒), Lü Huan-Huan (吕欢欢), Zhang Hui-Yun (张会云)   

  1. Qingdao Key Laboratory of Terahertz Technology, College of Science, Shandong University of Science and Technology, Qingdao 266510, China
  • Received:2013-08-09 Revised:2013-10-29 Online:2013-12-12 Published:2013-12-12
  • Contact: Zhang Yu-Ping E-mail:sdust_thz@163.com
  • About author:72.10.-d; 73.20.At; 73.23.-b; 73.22.-f
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61001018), the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2011FM009 and ZR2012FM011), the Research Fund of Shandong University of Science and Technology, China (Grant Nos. 2010KYJQ103 and 2012KYTD103), the Project of Shandong Province Higher Educational Science and Technology Program, China (Grant No. J11LG20), the Qingdao Municipal Science & Technology Project, China (Grant No. 11-2-4-4-(8)-jch), the Qingdao Municipal Economic and Technical Development Zone Science and Technology Project, China (Grant No. 2013-1-64), and the Shandong University of Science and Technology Foundation, China (Grant No. YC130220).

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摘要： We study the electronic properties for the graphene-based one-dimensional superlattices, whose potential voltages vary according to the envelope of a Gaussian function. It is found that an unusual Dirac point exists and its location is exactly associated with a zero-averaged wave number (zero-k) gap. This zero-k gap is less sensitive to incident angle and lattice constants, properties opposing those of Bragg gap. The defect mode appearing inside the zero-k gap has an effect on transmission, conductance, and shot noise, which will be useful for further investigation.

关键词: graphene superlattice, Gaussian profile, energy band

Abstract: We study the electronic properties for the graphene-based one-dimensional superlattices, whose potential voltages vary according to the envelope of a Gaussian function. It is found that an unusual Dirac point exists and its location is exactly associated with a zero-averaged wave number (zero-k) gap. This zero-k gap is less sensitive to incident angle and lattice constants, properties opposing those of Bragg gap. The defect mode appearing inside the zero-k gap has an effect on transmission, conductance, and shot noise, which will be useful for further investigation.

Key words: graphene superlattice, Gaussian profile, energy band

中图分类号:  (Theory of electronic transport; scattering mechanisms)

  • 72.10.-d
73.20.At (Surface states, band structure, electron density of states) 73.23.-b (Electronic transport in mesoscopic systems) 73.22.-f (Electronic structure of nanoscale materials and related systems)