›› 2014, Vol. 23 ›› Issue (12): 127901-127901.doi: 10.1088/1674-1056/23/12/127901

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Mn overlayers on PbTe (111): Substitutional adsorption and interface formation

吴海飞a b, 张寒洁a, 陆赟豪c, 鄢永红b, 李海洋a, 鲍世宁a, 何丕模a   

  1. a Department of Physics, Zhejiang University, Hangzhou 310027, China;
    b Department of Physics, Shaoxing University, Shaoxing 312000, China;
    c Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2014-04-22 修回日期:2014-07-31 出版日期:2014-12-15 发布日期:2014-12-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11074214, 51202149, and 11204180),the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ12F04001), the Scientific Research Fund of Zhejiang Provincial Education Department, China (Grant No. Y201121234), and the Ministry of Science and Technology of China.

Mn overlayers on PbTe (111): Substitutional adsorption and interface formation

Wu Hai-Fei (吴海飞)a b, Zhang Han-Jie (张寒洁)a, Lu Yun-Hao (陆赟豪)c, Yan Yong-Hong (鄢永红)b, Li Hai-Yang (李海洋)a, Bao Shi-Ning (鲍世宁)a, He Pi-Mo (何丕模)a   

  1. a Department of Physics, Zhejiang University, Hangzhou 310027, China;
    b Department of Physics, Shaoxing University, Shaoxing 312000, China;
    c Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • Received:2014-04-22 Revised:2014-07-31 Online:2014-12-15 Published:2014-12-15
  • Contact: He Pi-Mo E-mail:phypmhe@dial.zju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11074214, 51202149, and 11204180),the Natural Science Foundation of Zhejiang Province, China (Grant No. LQ12F04001), the Scientific Research Fund of Zhejiang Provincial Education Department, China (Grant No. Y201121234), and the Ministry of Science and Technology of China.

摘要: The formation of the Mn/PbTe (111) interface is investigated by photoemission spectrum. The core level behavior of Mn 2p is consistent with Mn substitutional adsorption during the initial Mn deposition, forming a (√3× √3)R30°-Pb0.67Mn0.33Te phase of the second layer. Further deposition of Mn can cause metallic Mn islands to cover the substitutional substrate. Ultraviolet photoemission measurements show that the Fermi level is shifted into the conduction band, indicating Ohmic contact formation at the Mn/PbTe (111) interface. The valence band maximum associated with the Pb0.67Mn0.33Te layer is located at 1.27 eV below the Fermi level, and a schematic electronic structure of the Mn/PbTe (111) interface is given. The work function of the substituted substrate with Pb-covered Mn islands is determined to be 4.16 eV, in comparison with 4.35 eV for the Pb-covered substituted substrate and 3.95 eV for the pristine PbTe (111) surface.

关键词: photoemission spectrum, metal–, semiconductor, electronic structure, PbTe

Abstract: The formation of the Mn/PbTe (111) interface is investigated by photoemission spectrum. The core level behavior of Mn 2p is consistent with Mn substitutional adsorption during the initial Mn deposition, forming a (√3× √3)R30°-Pb0.67Mn0.33Te phase of the second layer. Further deposition of Mn can cause metallic Mn islands to cover the substitutional substrate. Ultraviolet photoemission measurements show that the Fermi level is shifted into the conduction band, indicating Ohmic contact formation at the Mn/PbTe (111) interface. The valence band maximum associated with the Pb0.67Mn0.33Te layer is located at 1.27 eV below the Fermi level, and a schematic electronic structure of the Mn/PbTe (111) interface is given. The work function of the substituted substrate with Pb-covered Mn islands is determined to be 4.16 eV, in comparison with 4.35 eV for the Pb-covered substituted substrate and 3.95 eV for the pristine PbTe (111) surface.

Key words: photoemission spectrum, metal–semiconductor, electronic structure, PbTe

中图分类号:  (Photoemission and photoelectron spectra)

  • 79.60.-i
79.60.Jv (Interfaces; heterostructures; nanostructures) 73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.20.At (Surface states, band structure, electron density of states)