Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device

doi:10.1088/1674-1056/23/12/126101

›› 2014, Vol. 23 ›› Issue (12): 126101-126101.doi: 10.1088/1674-1056/23/12/126101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device

M. Ismail^{a b}, M. W. Abbas^a, A. M. Rana^a, I. Talib^a, E. Ahmed^a, M. Y. Nadeem^a, T. L. Tsai^b, U. Chand^b, N. A. Shah^c, M. Hussain^d, A. Aziz^a, M. T. Bhatti^a

a Department of Physics, Bahauddin Zakariya University, Multan-60800, Pakistan;
b Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan, China;
c Thin Films Technology Research Laboratory, Department of Physics, COMSATS Institute of Information Technology, Islamabad-45320, Pakistan;
d Center for High Energy Physics, University of Punjab, Lahore-54590, Pakistan

收稿日期:2014-05-21 修回日期:2014-07-04 出版日期:2014-12-15 发布日期:2014-12-15

Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device

M. Ismail^{a b}, M. W. Abbas^a, A. M. Rana^a, I. Talib^a, E. Ahmed^a, M. Y. Nadeem^a, T. L. Tsai^b, U. Chand^b, N. A. Shah^c, M. Hussain^d, A. Aziz^a, M. T. Bhatti^a

a Department of Physics, Bahauddin Zakariya University, Multan-60800, Pakistan;
b Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan, China;
c Thin Films Technology Research Laboratory, Department of Physics, COMSATS Institute of Information Technology, Islamabad-45320, Pakistan;
d Center for High Energy Physics, University of Punjab, Lahore-54590, Pakistan

Received:2014-05-21 Revised:2014-07-04 Online:2014-12-15 Published:2014-12-15
Contact: M. Ismail E-mail:ismailmalikbzu10@gmail.com

摘要/Abstract

摘要： Highly repeatable multilevel bipolar resistive switching in Ti/CeO_x/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO₂ films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (>10⁴ s) with an acceptable resistance ratio (～ 10²), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeO_x films, the possible mechanism of multilevel resistive switching in CeO_x RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.

关键词: multilevel resistive switching, Schottky emission, cerium oxide, oxygen vacancy

Abstract: Highly repeatable multilevel bipolar resistive switching in Ti/CeO_x/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO₂ films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (>10⁴ s) with an acceptable resistance ratio (～ 10²), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeO_x films, the possible mechanism of multilevel resistive switching in CeO_x RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.

Key words: multilevel resistive switching, Schottky emission, cerium oxide, oxygen vacancy

中图分类号: (X-ray diffraction)

61.05.cp

73.40.Rw (Metal-insulator-metal structures) 73.50.-h (Electronic transport phenomena in thin films) 77.22.Jp (Dielectric breakdown and space-charge effects)

M. Ismail, M. W. Abbas, A. M. Rana, I. Talib, E. Ahmed, M. Y. Nadeem, T. L. Tsai, U. Chand, N. A. Shah, M. Hussain, A. Aziz, M. T. Bhatti. Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device[J]. , 2014, 23(12): 126101-126101.

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Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device

Bipolar tri-state resistive switching characteristics in Ti/CeO_x/Pt memory device

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