Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

doi:10.1088/1674-1056/23/11/118504

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 118504-118504.doi: 10.1088/1674-1056/23/11/118504

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

云全新, 黎明, 安霞, 林猛, 刘朋强, 李志强, 张冰馨, 夏宇轩, 张浩, 张兴, 黄如, 王阳元

Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China

收稿日期:2014-03-11 修回日期:2014-04-23 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00601), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX02035-001), and the National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, and 60925015).

Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871, China

Received:2014-03-11 Revised:2014-04-23 Online:2014-11-15 Published:2014-11-15
Contact: Li Ming E-mail:liming.ime@pku.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00601), the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX02035-001), and the National Natural Science Foundation of China (Grant Nos. 60625403, 60806033, and 60925015).

摘要/Abstract

摘要：

Nitrogen plasma passivation (NPP) on (111) germanium (Ge) was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition (PECVD). The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interfacial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness (EOT) scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.

关键词: germanium, roughness, interface trap density, interfacial layer thickness

Abstract:

Key words: germanium, roughness, interface trap density, interfacial layer thickness

中图分类号: (Field effect devices)

85.30.Tv

61.72.uf (Ge and Si) 68.35.Ct (Interface structure and roughness) 85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)

云全新, 黎明, 安霞, 林猛, 刘朋强, 李志强, 张冰馨, 夏宇轩, 张浩, 张兴, 黄如, 王阳元. Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor[J]. 中国物理B, 2014, 23(11): 118504-118504.

Yun Quan-Xin (云全新), Li Ming (黎明), An Xia (安霞), Lin Meng (林猛), Liu Peng-Qiang (刘朋强), Li Zhi-Qiang (李志强), Zhang Bing-Xin (张冰馨), Xia Yu-Xuan (夏宇轩), Zhang Hao (张浩), Zhang Xing (张兴), Huang Ru (黄如), Wang Yang-Yuan (王阳元). Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor[J]. Chin. Phys. B, 2014, 23(11): 118504-118504.

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Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

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