中国物理B ›› 2014, Vol. 23 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/23/11/118102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Evolution of nitrogen structure in N-doped diamond crystal after high pressure and high temperature annealing treatment

郑友进a, 黄国锋b, 李战厂b, 左桂鸿a   

  1. a Physics Department, Mudanjiang Normal College, Province Key Laboratory of Superhard Materials, Mudanjiang 157011, China;
    b Department of Physics and Electronic Information Engineering, Chifeng University, Chifeng 024000, China
  • 收稿日期:2014-03-29 修回日期:2014-05-12 出版日期:2014-11-15 发布日期:2014-11-15
  • 基金资助:

    Project supported by the Natural Science Foundation of Heilongjiang Province, China (Grant No. E201341) and the Open Research Program of Key Lab of Superhard Materials of Mudanjiang Normal College, China (Grant No. 201302).

Evolution of nitrogen structure in N-doped diamond crystal after high pressure and high temperature annealing treatment

Zheng You-Jin (郑友进)a, Huang Guo-Feng (黄国锋)b, Li Zhan-Chang (李战厂)b, Zuo Gui-Hong (左桂鸿)a   

  1. a Physics Department, Mudanjiang Normal College, Province Key Laboratory of Superhard Materials, Mudanjiang 157011, China;
    b Department of Physics and Electronic Information Engineering, Chifeng University, Chifeng 024000, China
  • Received:2014-03-29 Revised:2014-05-12 Online:2014-11-15 Published:2014-11-15
  • Contact: Zheng You-Jin E-mail:zyjmsy@163.com
  • Supported by:

    Project supported by the Natural Science Foundation of Heilongjiang Province, China (Grant No. E201341) and the Open Research Program of Key Lab of Superhard Materials of Mudanjiang Normal College, China (Grant No. 201302).

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摘要：

In this paper, we have reported an investigation on the evolution of nitrogen structures in diamond crystals which contain nitrogen donor atoms in the range of 1500 ppm-1600 ppm following an annealing treatment at a high pressure of about 6.5 GPa and high temperatures of 1920 K-2120 K. The annealing treatment was found to completely transform nitrogen atoms originally arranged in a single substitutional form (C-center), into a pair form (A-center), indicated from infrared (IR) spectra. The photoluminescence (PL) spectra revealed that a small fraction of nitrogen atoms remained in C-center form, while some nitrogen atoms in A-center form were further transformed into N3 and H3 center structures. In addition, PL spectra have revealed the existence of two newly observed nitrogen-related structures with zero phonon lines at 611 nm and 711 nm. All these findings above are very helpful in understanding the formation mechanism of natural diamond stones of the Ia-type, which contains nitrogen atoms in an aggregated form.

关键词: IaA-type diamond crystal, nitrogen aggregation, H3 center, N3 center

Abstract:

In this paper, we have reported an investigation on the evolution of nitrogen structures in diamond crystals which contain nitrogen donor atoms in the range of 1500 ppm-1600 ppm following an annealing treatment at a high pressure of about 6.5 GPa and high temperatures of 1920 K-2120 K. The annealing treatment was found to completely transform nitrogen atoms originally arranged in a single substitutional form (C-center), into a pair form (A-center), indicated from infrared (IR) spectra. The photoluminescence (PL) spectra revealed that a small fraction of nitrogen atoms remained in C-center form, while some nitrogen atoms in A-center form were further transformed into N3 and H3 center structures. In addition, PL spectra have revealed the existence of two newly observed nitrogen-related structures with zero phonon lines at 611 nm and 711 nm. All these findings above are very helpful in understanding the formation mechanism of natural diamond stones of the Ia-type, which contains nitrogen atoms in an aggregated form.

Key words: IaA-type diamond crystal, nitrogen aggregation, H3 center, N3 center

中图分类号:  (Growth from melts; zone melting and refining)

  • 81.10.Fq
61.72.S- (Impurities in crystals) 74.62.Dh (Effects of crystal defects, doping and substitution) 78.55.-m (Photoluminescence, properties and materials)