›› 2014, Vol. 23 ›› Issue (11): 117306-117306.doi: 10.1088/1674-1056/23/11/117306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

E. Yağlıoğlu, Ö. Tüzün Özmen   

  1. Department of Physics, Faculty of Arts and Sciences, Düzce University, 81620 Düzce, Turkey
  • 收稿日期:2014-06-30 修回日期:2014-07-25 出版日期:2014-11-15 发布日期:2014-11-15

F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode

E. Yağlıoğlu, Ö. Tüzün Özmen   

  1. Department of Physics, Faculty of Arts and Sciences, Düzce University, 81620 Düzce, Turkey
  • Received:2014-06-30 Revised:2014-07-25 Online:2014-11-15 Published:2014-11-15
  • Contact: Ö. Tüzün Özmen E-mail:ozgetuzun@duzce.edu.tr

摘要: In this study, we investigate some main electrical parameters of the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon (Au/P3HT:PCBM:F4-TCNQ/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) in terms of the effects of F4-TCNQ concentration (0%, 1%, and 2%). F4-TCNQ-doped P3HT:PCBM is fabricated to figure out the p-type doping effect on the device performance. The main electrical parameters, such as ideality factor (n), barrier height (ΦB0), series resistance (Rs), shunt resistance (Rsh), and density of interface states (Nss) are determined from the forward and reverse bias current-voltage (I-V) characteristics in the dark and at room temperature. The values of n, Rs, ΦB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT:PCBM:F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft (1%) doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping (2%) become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT:PCBM:F4-TCNQ organic layer. Moreover, the soft F4-TCNQ doping concentration (1%) in P3HT:PCBM:F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

关键词: P3HT:PCBM:F4-TCNQ interfacial organic layer, F4-TCNQ doping concentration, Schottky barrier diodes, I-V characteristics

Abstract: In this study, we investigate some main electrical parameters of the gold/poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester:2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon (Au/P3HT:PCBM:F4-TCNQ/n-Si) metal-polymer-semiconductor (MPS) Schottky barrier diode (SBD) in terms of the effects of F4-TCNQ concentration (0%, 1%, and 2%). F4-TCNQ-doped P3HT:PCBM is fabricated to figure out the p-type doping effect on the device performance. The main electrical parameters, such as ideality factor (n), barrier height (ΦB0), series resistance (Rs), shunt resistance (Rsh), and density of interface states (Nss) are determined from the forward and reverse bias current-voltage (I-V) characteristics in the dark and at room temperature. The values of n, Rs, ΦB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT:PCBM:F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft (1%) doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping (2%) become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT:PCBM:F4-TCNQ organic layer. Moreover, the soft F4-TCNQ doping concentration (1%) in P3HT:PCBM:F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.

Key words: P3HT:PCBM:F4-TCNQ interfacial organic layer, F4-TCNQ doping concentration, Schottky barrier diodes, I-V characteristics

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
73.61.Ph (Polymers; organic compounds) 81.05.Fb (Organic semiconductors) 85.30.Hi (Surface barrier, boundary, and point contact devices)