中国物理B ›› 2014, Vol. 23 ›› Issue (10): 108501-108501.doi: 10.1088/1674-1056/23/10/108501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

秦洁宇a b, 杜刚b, 刘晓彦b   

  1. a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
    b Institute of Microelectronics, Peking University, Beijing 100871, China
  • 收稿日期:2014-03-21 修回日期:2014-04-29 出版日期:2014-10-15 发布日期:2014-10-15

Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

Qin Jie-Yu (秦洁宇)a b, Du Gang (杜刚)b, Liu Xiao-Yan (刘晓彦)b   

  1. a Shenzhen Graduate School, Peking University, Shenzhen 518055, China;
    b Institute of Microelectronics, Peking University, Beijing 100871, China
  • Received:2014-03-21 Revised:2014-04-29 Online:2014-10-15 Published:2014-10-15
  • Contact: Liu Xiao-Yan E-mail:xyliu@ime.pku.edu.cn
  • About author:85.30.Tv; 73.63.Nm; 73.50.Bk; 46.25.-y

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摘要： The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO2 warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top corners of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility.

关键词: strain, quantum effect, tri-gate, GOI

Abstract: The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO2 warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top corners of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility.

Key words: strain, quantum effect, tri-gate, GOI

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.63.Nm (Quantum wires) 73.50.Bk (General theory, scattering mechanisms) 46.25.-y (Static elasticity)