Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction

doi:10.1088/1674-1056/23/10/107101

›› 2014, Vol. 23 ›› Issue (10): 107101-107101.doi: 10.1088/1674-1056/23/10/107101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction

李世彬^a, 余宏萍^a, 张婷^a, 陈志^{a b}, 吴志明^a

a State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
b Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA

收稿日期:2014-03-13 修回日期:2014-04-22 出版日期:2014-10-15 发布日期:2014-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61204098 and 61371046).

Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction

Li Shi-Bin (李世彬)^a, Yu Hong-Ping (余宏萍)^a, Zhang Ting (张婷)^a, Chen Zhi (陈志)^{a b}, Wu Zhi-Ming (吴志明)^a

a State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
b Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA

Received:2014-03-13 Revised:2014-04-22 Online:2014-10-15 Published:2014-10-15
Contact: Li Shi-Bin E-mail:shibinli@uestc.edu.cn
About author:71.10.Ca; 71.15.-m; 73.40.Kp; 77.22.Ej
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61204098 and 61371046).

摘要/Abstract

摘要： High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6×10¹⁴ cm ^-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650℃ to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

关键词: polarization, AlGaN, carrier concentration, Ohmic contact

Abstract: High electronic density is achieved by polarization doping without an impurity dopant in graded AlGaN films. Low specific contact resistance is studied on the polarization-doped AlGaN/GaN heterojunctions by using the transmission line method (TLM). The sheet density of polarization-doped AlGaN/GaN heterojunction is 6×10¹⁴ cm ^-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The carrier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal (Ti/Al/Ti/Au) is deposited and annealed at 650℃ to realize the Ohmic contacts on the graded AlGaN/GaN heterojunctions.

Key words: polarization, AlGaN, carrier concentration, Ohmic contact

中图分类号: (Electron gas, Fermi gas)

71.10.Ca

71.15.-m (Methods of electronic structure calculations) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 77.22.Ej (Polarization and depolarization)

李世彬, 余宏萍, 张婷, 陈志, 吴志明. Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction[J]. , 2014, 23(10): 107101-107101.

Li Shi-Bin (李世彬), Yu Hong-Ping (余宏萍), Zhang Ting (张婷), Chen Zhi (陈志), Wu Zhi-Ming (吴志明). Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction[J]. Chin. Phys. B, 2014, 23(10): 107101-107101.

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Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction

Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction

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