Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

doi:10.1088/1674-1056/23/10/104209

›› 2014, Vol. 23 ›› Issue (10): 104209-104209.doi: 10.1088/1674-1056/23/10/104209

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

董宇^a, 王广龙^a, 王红培^a, 倪海桥^b, 陈建辉^a, 高凤岐^a, 乔中涛^a, 杨晓红^b, 牛智川^b

a Laboratory of Nanotechnology and Microsystems, Mechanical Engineering College, Shijiazhuang 050000, China;
b Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2013-11-01 修回日期:2014-02-10 出版日期:2014-10-15 发布日期:2014-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61274125) and the Natural Science Foundation of Beijing, China (Grant No. 11DB1262).

Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

Dong Yu (董宇)^a, Wang Guang-Long (王广龙)^a, Wang Hong-Pei (王红培)^a, Ni Hai-Qiao (倪海桥)^b, Chen Jian-Hui (陈建辉)^a, Gao Feng-Qi (高凤岐)^a, Qiao Zhong-Tao (乔中涛)^a, Yang Xiao-Hong (杨晓红)^b, Niu Zhi-Chuan (牛智川)^b

a Laboratory of Nanotechnology and Microsystems, Mechanical Engineering College, Shijiazhuang 050000, China;
b Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2013-11-01 Revised:2014-02-10 Online:2014-10-15 Published:2014-10-15
Contact: Dong Yu E-mail:jushangzhilei@foxmail.com
About author:42.60.Da; 85.30.Tv; 85.60.Gz
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61274125) and the Natural Science Foundation of Beijing, China (Grant No. 11DB1262).

摘要/Abstract

摘要： A resonant cavity-enhanced (RCE) quantum dot (QD) field-effect transistor (RCEQDFET) is designed for single-photon detection in this paper. Adding distributed Bragg reflection (DBR) mirrors to the single-photon detector (SPD), we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector's light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of Al_xGa_1-xAs and Al component, we choose AlAs/Al_0.15Ga_0.85As as the material of the mirror on the bottom. The pairs of AlAs/Al_0.15Ga_0.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence (PL) spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.

关键词: single-photon detector, quantum dot field-effect transistor, resonant cavity enhanced

Abstract: A resonant cavity-enhanced (RCE) quantum dot (QD) field-effect transistor (RCEQDFET) is designed for single-photon detection in this paper. Adding distributed Bragg reflection (DBR) mirrors to the single-photon detector (SPD), we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector's light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of Al_xGa_1-xAs and Al component, we choose AlAs/Al_0.15Ga_0.85As as the material of the mirror on the bottom. The pairs of AlAs/Al_0.15Ga_0.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence (PL) spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.

Key words: single-photon detector, quantum dot field-effect transistor, resonant cavity enhanced

中图分类号: (Resonators, cavities, amplifiers, arrays, and rings)

42.60.Da

85.30.Tv (Field effect devices) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

董宇, 王广龙, 王红培, 倪海桥, 陈建辉, 高凤岐, 乔中涛, 杨晓红, 牛智川. Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector[J]. , 2014, 23(10): 104209-104209.

Dong Yu (董宇), Wang Guang-Long (王广龙), Wang Hong-Pei (王红培), Ni Hai-Qiao (倪海桥), Chen Jian-Hui (陈建辉), Gao Feng-Qi (高凤岐), Qiao Zhong-Tao (乔中涛), Yang Xiao-Hong (杨晓红), Niu Zhi-Chuan (牛智川). Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector[J]. Chin. Phys. B, 2014, 23(10): 104209-104209.

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Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

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