Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

doi:10.1088/1674-1056/23/1/017701

中国物理B ›› 2014, Vol. 23 ›› Issue (1): 17701-017701.doi: 10.1088/1674-1056/23/1/017701

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

谭桢, 赵连锋, 王敬, 许军

Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

收稿日期:2013-05-22 修回日期:2013-07-13 出版日期:2013-11-12 发布日期:2013-11-12
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project, China (Grant No. 2011ZX02708-002).

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Tan Zhen (谭桢), Zhao Lian-Feng (赵连锋), Wang Jing (王敬), Xu Jun (许军)

Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China

Received:2013-05-22 Revised:2013-07-13 Online:2013-11-12 Published:2013-11-12
Contact: Xu Jun E-mail:junxu@tsinghua.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00602) and the National Science and Technology Major Project, China (Grant No. 2011ZX02708-002).

摘要/Abstract

摘要： Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D_it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO₂ or Al₂O₃ dielectric layers.

关键词: HfAlO, GaSb, metal-oxide-semiconductor capacitors, interfacial properties

Abstract: Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density D_it of the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness (EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy (HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO₂ or Al₂O₃ dielectric layers.

Key words: HfAlO, GaSb, metal-oxide-semiconductor capacitors, interfacial properties

中图分类号:

77.55.D-

81.05.Ea (III-V semiconductors) 81.65.Rv (Passivation) 73.20.At (Surface states, band structure, electron density of states)

谭桢, 赵连锋, 王敬, 许军. Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation[J]. 中国物理B, 2014, 23(1): 17701-017701.

Tan Zhen (谭桢), Zhao Lian-Feng (赵连锋), Wang Jing (王敬), Xu Jun (许军). Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation[J]. Chin. Phys. B, 2014, 23(1): 17701-017701.

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Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

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