中国物理B ›› 2013, Vol. 22 ›› Issue (9): 97301-097301.doi: 10.1088/1674-1056/22/9/097301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer

朱述炎a, 徐静平a, 汪礼胜a b, 黄苑a   

  1. a School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
    b Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China
  • 收稿日期:2013-04-11 修回日期:2013-05-15 出版日期:2013-07-26 发布日期:2013-07-26
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176100).

Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer

Zhu Shu-Yan (朱述炎)a, Xu Jing-Ping (徐静平)a, Wang Li-Sheng (汪礼胜)a b, Huang Yuan (黄苑)a   

  1. a School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
    b Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China
  • Received:2013-04-11 Revised:2013-05-15 Online:2013-07-26 Published:2013-07-26
  • Contact: Xu Jing-Ping E-mail:jpxu@mail.hust.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176100).

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摘要： A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance-voltage characteristic, lower leakage current density (0.785×10-6 A/cm2 at Vfb+1 V) and lower interface-state density (2.9×1012 eV-1·cm-2) compared with other samples with N2- or NH3- plasma pretreatment. The influences of postdeposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600℃ exhibits better electrical properties than that annealed at 500℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.

关键词: GaAs metal-oxide-semiconductor (MOS) devices, silicon nitride, interlayer, post-deposition annealing

Abstract: A GaAs metal-oxide-semiconductor (MOS) capacitor with HfO2 as gate dielectric and silicon nitride (SiNx) as the interlayer (IL) is fabricated. Experimental results show that the sample with the SiNx IL has an improved capacitance-voltage characteristic, lower leakage current density (0.785×10-6 A/cm2 at Vfb+1 V) and lower interface-state density (2.9×1012 eV-1·cm-2) compared with other samples with N2- or NH3- plasma pretreatment. The influences of postdeposition annealing temperature on electrical properties are also investigated for the samples with SiNx IL. The sample annealed at 600℃ exhibits better electrical properties than that annealed at 500℃, which is attributed to the suppression of native oxides, as confirmed by XPS analyses.

Key words: GaAs metal-oxide-semiconductor (MOS) devices, silicon nitride, interlayer, post-deposition annealing

中图分类号:  (Electron solids)

  • 73.20.Qt
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ey (III-V semiconductors)