中国物理B ›› 2013, Vol. 22 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/22/8/088503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

丁彬彬a b, 赵芳a b, 宋晶晶a b, 熊建勇a b, 郑树文a b, 张运炎a b, 许毅钦a b, 周德涛a b, 喻晓鹏a b, 张瀚翔a b, 张涛a b, 范广涵a b   

  1. a Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b Laboratory of Nanophotonic Functional Materials and Device, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2012-10-23 修回日期:2013-01-09 出版日期:2013-06-27 发布日期:2013-06-27
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016), and the Youth Foundation of South China Normal University (Grant No. 2012KJ018).

Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer

Ding Bin-Bin (丁彬彬)a b, Zhao Fang (赵芳)a b, Song Jing-Jing (宋晶晶)a b, Xiong Jian-Yong (熊建勇)a b, Zheng Shu-Wen (郑树文)a b, Zhang Yun-Yan (张运炎)a b, Xu Yi-Qin (许毅钦)a b, Zhou De-Tao (周德涛)a b, Yu Xiao-Peng (喻晓鹏)a b, Zhang Han-Xiang (张瀚翔)a b, Zhang Tao (张涛)a b, Fan Guang-Han (范广涵)a b   

  1. a Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
    b Laboratory of Nanophotonic Functional Materials and Device, South China Normal University, Guangzhou 510631, China
  • Received:2012-10-23 Revised:2013-01-09 Online:2013-06-27 Published:2013-06-27
  • Contact: Fan Guang-Han E-mail:gfan@scnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong Province, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016), and the Youth Foundation of South China Normal University (Grant No. 2012KJ018).

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摘要： Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with gradual Al composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency (IQE). The results indicate that LEDs with an n-AlGaN HBL with gradual Al composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conventional p-AlGaN EBL or a common n-AlGaN HBL. Meanwhile, the efficiency droop is alleviated when an n-AlGaN HBL with gradual Al composition is used.

关键词: p-AlGaN electron blocking layer (EBL), n-AlGaN hole blocking layer (HBL), numerical simulation, InGaN light-emitting diode (LED)

Abstract: Blue InGaN light-emitting diodes (LEDs) with a conventional electron blocking layer (EBL), a common n-AlGaN hole blocking layer (HBL), and an n-AlGaN HBL with gradual Al composition are investigated numerically, which involves analyses of the carrier concentration in the active region, energy band diagram, electrostatic field, and internal quantum efficiency (IQE). The results indicate that LEDs with an n-AlGaN HBL with gradual Al composition exhibit better hole injection efficiency, lower electron leakage, and a smaller electrostatic field in the active region than LEDs with a conventional p-AlGaN EBL or a common n-AlGaN HBL. Meanwhile, the efficiency droop is alleviated when an n-AlGaN HBL with gradual Al composition is used.

Key words: p-AlGaN electron blocking layer (EBL), n-AlGaN hole blocking layer (HBL), numerical simulation, InGaN light-emitting diode (LED)

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
85.30.-z (Semiconductor devices) 87.15.A- (Theory, modeling, and computer simulation) 78.60.Fi (Electroluminescence)