Influences of high-temperature annealing on atomic layer deposited Al2O3/4H-SiC

doi:10.1088/1674-1056/22/7/078102

中国物理B ›› 2013, Vol. 22 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/22/7/078102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Influences of high-temperature annealing on atomic layer deposited Al₂O₃/4H-SiC

王弋宇^a, 申华军^a, 白云^a, 汤益丹^a, 刘可安^b, 李诚瞻^b, 刘新宇^a

a Department of Microwave Device and Integrated Circuit, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, Chinal;
b Zhuzhou CSR Times Electric Co. Ltd., Zhuzhou 412001, China

收稿日期:2012-11-07 修回日期:2013-01-31 出版日期:2013-06-01 发布日期:2013-06-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61106080) and the Major Program of the National Natural Science Foundation of China (Grant No. 2013ZX02305).

Influences of high-temperature annealing on atomic layer deposited Al₂O₃/4H-SiC

Wang Yi-Yu (王弋宇)^a, Shen Hua-Jun (申华军)^a, Bai Yun (白云)^a, Tang Yi-Dan (汤益丹)^a, Liu Ke-An (刘可安)^b, Li Cheng-Zhan (李诚瞻)^b, Liu Xin-Yu (刘新宇)^a

a Department of Microwave Device and Integrated Circuit, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, Chinal;
b Zhuzhou CSR Times Electric Co. Ltd., Zhuzhou 412001, China

Received:2012-11-07 Revised:2013-01-31 Online:2013-06-01 Published:2013-06-01
Contact: Shen Hua-Jun E-mail:shenhuajun@ime.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61106080) and the Major Program of the National Natural Science Foundation of China (Grant No. 2013ZX02305).

摘要/Abstract

摘要： High-temperature annealing of atomic layer deposition (ALD) of Al₂O₃ films on 4H-SiC in O₂ atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al₂O₃ films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O₂ atmosphere can improve the interface of Al₂O₃/SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.

关键词: Al₂O₃, SiC, high-temperature annealing, crystallize

Abstract: High-temperature annealing of atomic layer deposition (ALD) of Al₂O₃ films on 4H-SiC in O₂ atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al₂O₃ films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O₂ atmosphere can improve the interface of Al₂O₃/SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.

Key words: Al₂O₃, SiC, high-temperature annealing, crystallize

中图分类号: (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)

81.40.Ef

73.20.-r (Electron states at surfaces and interfaces) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

王弋宇, 申华军, 白云, 汤益丹, 刘可安, 李诚瞻, 刘新宇. Influences of high-temperature annealing on atomic layer deposited Al₂O₃/4H-SiC[J]. 中国物理B, 2013, 22(7): 78102-078102.

Wang Yi-Yu (王弋宇), Shen Hua-Jun (申华军), Bai Yun (白云), Tang Yi-Dan (汤益丹), Liu Ke-An (刘可安), Li Cheng-Zhan (李诚瞻), Liu Xin-Yu (刘新宇). Influences of high-temperature annealing on atomic layer deposited Al₂O₃/4H-SiC[J]. Chin. Phys. B, 2013, 22(7): 78102-078102.

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Influences of high-temperature annealing on atomic layer deposited Al₂O₃/4H-SiC

Influences of high-temperature annealing on atomic layer deposited Al₂O₃/4H-SiC

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